Transformer Shield Layout for Semiconductor Crosstalk Suppression
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Solution Overview
Problem
Crosstalk between channels in semiconductor devices is a persistent issue due to capacitive coupling between transformers, leading to signal interference and reduced manufacturing process optimization.
Innovation Solution
Incorporating a shield connected to a reference potential between the transformers, which is wider than the transformers in the orthogonal direction, to suppress capacitive coupling and minimize eddy currents, thereby reducing crosstalk and optimizing the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transformers are arranged closely to increase channel density, then productivity is improved, but crosstalk between channels increases due to capacitive coupling
Solution Approach 1:
A shield structure is introduced as an intermediary element between adjacent transformers. The shield is positioned between the primary and secondary windings of neighboring transformers and is connected to ground potential, thereby intercepting and diverting capacitive coupling effects before they can cause crosstalk between channels, while allowing the transformers to remain closely spaced for high channel density
2Object-affected harmful factors
If shield width is increased to suppress crosstalk, then crosstalk suppression is improved, but device area increases
Solution Approach 1:
The shield structure is designed with non-uniform width characteristics - wider at the ends and narrower in the middle section. This local quality variation optimizes the shield's effectiveness in suppressing crosstalk at the edges where capacitive coupling is strongest, while reducing the overall area occupied by the shield. The differential width design targets the specific locations where crosstalk suppression is most critical
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The shield effectively suppresses crosstalk between channels, enhancing signal integrity and simplifying the manufacturing process by reducing capacitive coupling and eddy current generation.
Implementation Method 1
crosstalk may occur between channels. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings.
Implementation Method 2
Incorporating a shield connected to a reference potential between the transformers, which is wider than the transformers in the orthogonal direction, to suppress capacitive coupling and minimize eddy currents
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a first coil, a second coil, a third coil, and a fourth coil, an insulating layer, and a first shield. The semiconductor substrate has a device region and a peripheral region. The peripheral region is present around the device region in a plan view. The first coil and the second coil are arranged on the device region and are arranged in a first direction in a plan view. The third coil and the fourth coil are respectively opposed to the first coil and the second coil via the insulating layer. The first shield is arranged between the semiconductor substrate and the first and second coils and overlaps with the first coil and the second coil in a plan view. A width of the first shield in a second direction orthogonal to the first direction is larger than a width of the first coil in the second direction and a width of the second coil in the second direction. The first shield is electrically connected to a reference potential.