Transient Suppression Device Low Impedance Vertical MOS Transistor
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Solution Overview
Problem
Existing transient suppression devices have high impedance and a soft knee in their V-I characteristic curve, making them inadequate for protecting electronic devices operating at lower voltages, such as those below 5 volts, as they fail to effectively manage transient electrical disturbances like electrostatic discharge.
Innovation Solution
A semiconductor device with a low impedance and a sharp V-I characteristic curve is developed, utilizing a vertical MOS transistor and an amplifier to clamp input and output terminals, ensuring effective protection at lower voltages by maintaining a low clamp voltage and minimizing voltage variation across the device during high current conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If prior transient suppression devices (zener diodes or transistors in diode configuration) are used, then protection from transient electrical disturbances is provided, but the impedance is high (1-10 ohms) resulting in large voltage change across the device as current increases
Solution Approach 1:
The patent changes the electrical parameters of the suppression device by using a MOS transistor operating in the linear region with a resistance significantly lower than conventional devices (0.01-0.1 ohms versus 1-10 ohms). This parameter change enables the device to maintain stable voltage across a wide range of currents, resolving the contradiction between providing transient protection and minimizing voltage variation.
Solution Approach 2:
The patent employs a dynamic control mechanism where the MOS transistor's resistance is actively maintained in the linear region through circuit design that ensures the transistor adapts its operating state based on current conditions. This dynamic operation allows the device to maintain low resistance during transient events while protecting the electronic component.
2Reliability
If prior transient suppression devices are used, then transient protection is provided, but the knee of the V-I characteristic curve is soft making them inadequate for protecting electronic devices operating at lower voltages
Solution Approach 1:
The patent modifies the V-I characteristic curve by operating the MOS transistor in the linear region where it exhibits resistive behavior with a sharp transition point. This creates a well-defined knee in the V-I curve that enables precise voltage clamping, resolving the contradiction between providing transient protection and achieving a sharp characteristic curve suitable for low-voltage applications.
3Reliability
If prior transient suppression devices are used, then protection is provided, but they cannot adequately protect electronic devices operating at voltages below 5 volts
Solution Approach 1:
The patent changes the operating parameters by using a MOS transistor with resistance in the range of 0.01-0.1 ohms, which enables effective operation at low voltages below 5 volts. This parameter change allows the device to provide adequate protection for modern low-voltage electronic components that cannot be protected by conventional high-impedance transient suppression devices.
Data Source
AI summary
In one embodiment, a semiconductor device to provide protection for electronic circuits, the semiconductor device typically includes a vertical MOS transistor, a reference circuit, and an amplifier. The amplifier amplifies the reference voltage to enable the vertical MOS transistor responsively to a transient event.