Transient Voltage Suppressor With Multi-Well Structure
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Solution Overview
Problem
Conventional transient voltage suppressors have complex structures and difficulty in reducing overall resistance due to current concentration in a single path during electrostatic discharge events, which can lead to damage and high clamping voltage.
Innovation Solution
A transient voltage suppressor design featuring a substrate with multiple wells and electrodes, including a gap between the second and third wells that diffuse to form a gourd-like structure, allowing for a second current path to reduce overall resistance, and a heavily-doped region to adjust trigger voltage and on-resistance, with a floating doped region to prevent overheating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a gate structure is used to control turn-on voltage, then the turn-on voltage can be controlled, but the structure becomes complicated
Solution Approach 1:
The patent removes the gate structure from the transient voltage suppressor device, eliminating the source of structural complexity while maintaining voltage control functionality through the breakdown voltage mechanism of the semiconductor junctions
Solution Approach 2:
The patent controls turn-on voltage by adjusting doping concentrations and well dimensions rather than using a gate structure, changing the control mechanism from electrical gating to material parameter optimization
2Reliability
If current flows through a single path, then the device structure is simple, but the overall resistance cannot be reduced
Solution Approach 1:
The patent divides the current conduction path into multiple parallel paths by creating separate well structures (first well, second well, third well) that provide independent current flow routes, thereby reducing overall resistance without significantly increasing structural complexity
Solution Approach 2:
The patent transitions from a single-dimensional current path to a multi-dimensional current distribution by utilizing vertical well structures and lateral diffusion connections, creating a three-dimensional current flow network that reduces resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design simplifies the structure by eliminating the gate electrode, reduces on-resistance through adjustable gap and doping concentrations, and effectively shunts current to prevent overheating and lower overall resistance during electrostatic discharge events.
Implementation Method 1
The second well and the third well are diffused to connect each other on the gap
Implementation Method 2
The doped region is electrically connected with the first well and the third well respectively
Data Source
AI summary
A transient voltage suppressor includes a substrate, a first well, a second well, a third well, a first electrode, a second electrode and a doped region. The first well is formed in the substrate and near a surface of the substrate. The second well is formed in the first well and near the surface. The third well is formed in the first well and near the surface. There is a gap between the second well and the third well. The first electrode and second electrode are formed in the second well and near the surface respectively. The first well and first electrode have a first electrical property. The second well, third well and second electrode have a second electrical property. The doped region is formed between the first electrode and second electrode and near the surface and electrically connected with the first well and third well.