Transistor with Anti-Parallel Ferromagnetic Contacts and Paramagnetic Impurities
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Solution Overview
Problem
Conventional field effect transistors (FETs) with paramagnetic defects and ferromagnetic contacts face challenges in efficiently utilizing spin-flip impurities for current modulation and memory applications due to limitations in controlling spin states and magnetic orientations, leading to suboptimal current conductivity and logic state differentiation.
Innovation Solution
A transistor device with anti-parallel ferromagnetic contacts and an insulating layer containing paramagnetic impurities, where a magnetic field is used to orient the ferromagnetic members and induce spin polarization, allowing for voltage-controlled conductance changes and logic state representation through spin-flip impurities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If paramagnetic defects are present in conventional FETs, then spin-flip impurities can be utilized for current modulation, but control over spin states and magnetic orientations is limited leading to suboptimal current conductivity
Solution Approach 1:
The patent applies parameter changes by utilizing the spin polarization state of paramagnetic impurities as a controllable parameter. By changing the spin state configuration (parallel vs anti-parallel alignment), the device achieves different conductance states, enabling effective current modulation and logic state differentiation without requiring complex control mechanisms.
Solution Approach 2:
The invention employs composite materials by combining ferromagnetic contacts with paramagnetic impurities in the gate oxide or at the interface. This composite structure leverages the magnetic properties of both materials to achieve spin-dependent transport and improve current modulation efficiency while maintaining ease of operation through the inherent magnetic interactions.
2Reliability
If ferromagnetic contacts are used for spin injection, then net spin polarization can be achieved, but device complexity increases due to selective magnetization orientation requirements
Solution Approach 1:
The patent applies equipotentiality by using the magnetic field as a common control potential that simultaneously affects both ferromagnetic contacts. By applying an external magnetic field, the spin polarization is established in a uniform manner across the device, simplifying the control mechanism while maintaining reliable spin injection and reducing device complexity.
3Measurement precision
If paramagnetic impurities are used for spin flipping, then current magnitude sensitivity improves, but manufacturing precision requirements increase for impurity placement
Solution Approach 1:
The invention applies self-service by utilizing the natural occurrence of paramagnetic impurities in the gate oxide or at the gate oxide-semiconductor interface. Rather than requiring precise placement of impurities, the device leverages the inherently present impurities, which self-organize to provide the necessary spin-flipping functionality. This approach maintains high current magnitude sensitivity while significantly reducing manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves sensitive current magnitude changes based on spin polarization, enabling effective memory element operation and efficient logic state switching, with the ability to direct current flow for charging and discharging, thus enhancing memory and capacitor functionality.
Implementation Method 1
electrons interacting with the paramagnetic impurities cause the paramagnetic impurities to flip between the two spin states
Implementation Method 2
means for coupling a magnetic field to the second ferromagnetic member to orient a magnetic orientation of the second ferromagnetic member in an anti-parallel magnetic orientation relative to a magnetic orientation of the first ferromagnetic member
Implementation Method 3
A second voltage source may be configured to apply a second voltage across the first and second semiconductor regions to cause a current to flow through the electrically conductive channel between the first and second semiconductor regions
Implementation Method 4
A first voltage source may be configured to apply a first voltage to the gate that induces an electrically conductive channel in the third semiconductor region that extends between the first and second semiconductor regions
Data Source
AI summary
A transistor device may comprise a source having a first ferromagnetic contact thereto, a drain having a second ferromagnetic contact thereto, an electrically conductive gate positioned over a channel region separating the source and the drain, and an electrically insulating layer disposed between the gate and the channel region. The first and second ferromagnetic contacts have anti-parallel magnetic orientations relative to each other. The electrically insulating layer includes a number of paramagnetic impurities each having two spin states such that electrons interacting with the paramagnetic impurities cause the paramagnetic impurities to flip between the two spin states.