Transistor Biasing Circuit with Dynamic Body Voltage Control
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Solution Overview
Problem
Existing techniques for generating forward and reverse body biasing voltages in integrated circuits are complex and result in relatively poor power consumption for a given performance level, particularly in SOI transistor technology.
Innovation Solution
A method and integrated circuit that use a body biasing voltage generator to adjust n-type and p-type well voltages based on sensor signals representing transistor performance, employing charge pumps and comparators to maintain optimal voltage levels, allowing for symmetrical or asymmetrical biasing to correct performance mismatches between NMOS and PMOS transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If existing techniques are used to generate forward and reverse body biasing voltages, then body biasing can be applied to SOI transistors, but the circuit complexity increases and power consumption worsens
Solution Approach 1:
The patent combines the control of n-well and p-well biasing voltages into a unified control architecture. The controller receives a single performance indicator signal and coordinates both charge pumps to achieve dual well biasing, reducing overall system complexity while maintaining the broad voltage range capability needed for SOI transistor optimization
Solution Approach 2:
The controller circuit performs multiple functions: it monitors transistor performance through the sensor signal, determines both forward and reverse biasing requirements, and coordinates both n-well and p-well charge pumps. This multi-functional approach eliminates the need for separate control circuits for each well, reducing overall device complexity while maintaining adaptability
2Productivity
If existing techniques are used to generate forward and reverse body biasing voltages, then transistor performance can be optimized, but power consumption increases
Solution Approach 1:
The patent implements dynamic body biasing control where the controller continuously monitors transistor performance indicators and adjusts biasing voltages in real-time. This dynamic adjustment allows the system to optimize transistor performance while consuming minimal power by applying biasing only when and where needed, rather than using static or continuously active biasing circuits
Solution Approach 2:
The system uses sensor signals that provide feedback on transistor performance (such as speed or current leakage measurements). The controller uses this feedback to intelligently determine when to apply forward or reverse body biasing, ensuring optimal power-performance tradeoff by adjusting biasing voltages based on actual transistor operating conditions rather than using fixed high-power biasing schemes
Data Source
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AI summary
The invention concerns a transistor biasing circuit comprising: a first controller (402) configured to receive a sensor signal (F_SENSOR) generated based on the performance of one or more transistors of a digital circuit and to compare the sensor signal with a reference signal (F_REF) and to generate a first biasing voltage control signal (CTRL_N); a first actuator (404) configured to generate a first biasing voltage (VNW, VPW) based on the first biasing voltage control signal (CTRL N); a second actuator (414) configured to generate a second biasing voltage (VPW, VNW) based on a second biasing voltage control signal (CTRL_P); and a second controller (412) configured to generate the second biasing voltage control signal (CTRL_P) based on an intermediate voltage level (VMID) generated based on the first and second biasing voltages (VNW, VPW).