Transistor Threshold Voltage Adjustment via Body Effect
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Solution Overview
Problem
Current semiconductor technologies lack the ability to effectively adjust threshold voltage in transistor devices, which is essential for various industries, including biosensors, where such adjustability is crucial.
Innovation Solution
A transistor device design featuring a substrate with a gate structure, first and second doped regions of different conductive types, and a body region separated by distance without an isolation structure, allowing for adjustable threshold voltage through the body effect and enabling reduced device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If no isolation structure exists between the body region and the first doped region, then the device size is reduced, but the threshold voltage adjustability may be compromised
Solution Approach 1:
The patent segments the device into distinct functional regions: a body region with a first conductive type and a doped region with a second conductive type. This segmentation allows the body region to be electrically connected to a voltage source for threshold voltage adjustment while maintaining close proximity to the doped region for efficient current flow, achieving both size reduction and threshold voltage adjustability
Solution Approach 2:
The body region serves multiple functions: it acts as both the active channel region for current flow and the control region for threshold voltage adjustment through body effect. By eliminating the isolation structure, the body region directly interfaces with the doped region, enabling the same structure to provide both transport and control functions
2Adaptability or versatility
If the body region and first doped region are separated by a distance, then the threshold voltage can be adjusted through body effect, but the device area increases
Solution Approach 1:
The patent transitions from a planar layout to a three-dimensional structure by forming the body region and doped region at different depths within the substrate. The body region is positioned at a first depth while the doped region is positioned at a second depth, allowing vertical separation that enables threshold voltage adjustment without increasing the horizontal device footprint
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design allows for adjustable threshold voltage and reduced transistor size, enabling improved performance and versatility in applications such as high and low voltage LDMOS devices.
Implementation Method 1
the body region and the first doped region are separated by a distance, and no isolation structure exists between the body region and the first doped region... the transistor device can have the threshold voltage adjustable function by using the body effect
Data Source
AI summary
A transistor device including a substrate, a gate structure, a first doped region, a second doped region and a body region is provided. The gate structure is disposed on the substrate. The first doped region and the second doped region are respectively disposed in the substrate at one side and another side of the gate structure. The first doped region and the second doped region have a first conductive type. The body region is disposed in the substrate at one side of the first doped region away from the gate structure. The body region has a second conductive type. The body region and the first doped region are separated by a distance, and no isolation structure exists between the body region and the first doped region.