Transistor Carrier Cooling With Resilient Contact Pressure

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Solution Overview

Problem

High-power MOSFETs in electric motor inverters generate excessive heat due to inherent resistance and switching actions, exacerbated by high ambient temperatures, leading to thermal stress and reduced reliability, necessitating effective cooling solutions to maintain performance and safety.

Innovation Solution

A system utilizing resilient members to apply a positive force on switching transistors, pressing them against a cooling surface, combined with a coolant pocket and rigid members to enhance thermal coupling and reduce noise, vibration, and electrical hazards in high-voltage applications.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If high-power MOSFETs are used for high power and high efficiency, then power output is improved, but heat generation increases leading to thermal stress and reduced reliability

Engineering Contradiction:
Improvepower outputVSAvoidtransistor reliability
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent converts the harmful heat generated by MOSFET operation into a beneficial thermal management opportunity by implementing a direct thermal coupling system where the transistor case is pressed against a cooling surface, transforming waste heat into a controllable thermal flow that protects component reliability while maintaining high power output

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent introduces resilient members as intermediaries between the MOSFET and cooling surface, providing a mechanical mediator that ensures consistent thermal contact while accommodating thermal expansion and contraction, thereby maintaining reliable thermal coupling under varying operating conditions

Inventive Principle:
Principle #24Intermediary (Mediator)

2Volume of moving object

If MOSFETs are placed in close proximity to turbocharger and exhaust pipes for compact design, then space utilization is improved, but ambient temperature increases worsening thermal management

Engineering Contradiction:
Improveinverter volumeVSAvoidambient temperature
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The patent applies local quality by providing enhanced cooling specifically at the MOSFET location through direct thermal coupling to a cooling surface, creating a localized low-temperature zone around the transistor while maintaining compact overall system volume and proximity to heat-generating components like the turbocharger

Inventive Principle:
Principle #3Local quality

3Temperature

If cooling pressure is increased to improve thermal coupling, then heat dissipation is improved, but mechanical stress and noise increase

Engineering Contradiction:
Improvecooling efficiencyVSAvoidnoise and vibration
Core Design Contradiction:
TemperatureVSObject-affected harmful factors

Solution Approach 1:

The patent changes the mechanical parameter from rigid high-force pressing to compliant resilient member-based contact, allowing adequate thermal coupling pressure to be applied without generating excessive noise and vibration, while still achieving effective heat dissipation through the transistor case-to-cooling-surface interface

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances thermal management, improves reliability and safety by maintaining optimal transistor cooling, reducing noise and vibration, and preventing electrical breakdowns in compact, high-temperature environments.

Implementation Method 1

pressing them against a cooling surface to enhance thermal coupling

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

resilient members to apply a positive force on a first surface of a switching transistor

Methodology Applied
Scientific EffectElasticity: Elasticity

Data Source

PatentUS20250267823A1Transistor carrier and cooling mechanism
Publication Date: 2025.08.21 GARRETT TRANSPORTATION I INC
  • US20250267823A1 patent drawing
  • US20250267823A1 patent drawing
  • US20250267823A1 patent drawing

AI summary

A low loss power inverter including a printed circuit board having an upper surface, a lower surface and an internal layer disposed between the lower surface and the upper surface, a first transistor, disposed on the upper surface, having a first terminal, a second transistor, disposed on the upper surface, having a second terminal, and a decoupling capacitor having a first capacitor terminal conductively coupled to the first terminal via a first trace laminated to the upper surface and a second capacitor terminal conductively coupled to the second terminal via a second trace laminated to the lower surface.