Transistor Channel Temperature Sensing Through Substrate Integration
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Solution Overview
Problem
Conventional semiconductor devices face challenges in accurately measuring transistor temperatures due to the distance of temperature-measuring sensors from the gate-channel region, which is the main heat source, and are affected by external air temperatures, leading to reduced performance and lifetime.
Innovation Solution
A semiconductor device with a temperature-measuring sensor disposed adjacent to the channel region of the transistor, integrated into the active layer, and connected to a ground electrode, allowing for precise temperature measurement without external interference, and formed in the same process as the active layer to reduce costs and space requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a temperature-measuring sensor is disposed far from the gate-channel region, then the sensor is easier to manufacture and integrate, but the temperature measurement precision deteriorates because the sensor is not close to the main heat source
Solution Approach 1:
The patent utilizes the vertical dimension by disposing the temperature-measuring sensor on the lower surface of the semiconductor substrate, while the gate-channel region is on the upper surface. This three-dimensional arrangement allows the sensor to be thermally coupled to the heat source through the substrate thickness direction, achieving close thermal contact without occupying lateral space or requiring complex lateral integration processes.
2Device complexity
If a temperature-measuring sensor is disposed far from the gate-channel region, then the device structure is simpler, but the temperature measurement is affected by external air temperature
Solution Approach 1:
The patent employs the semiconductor substrate itself as a thermal isolation barrier. By positioning the temperature-measuring sensor on the lower surface of the substrate, the substrate acts as a thermal shield that isolates the sensor from external air temperature variations, while still allowing thermal conduction from the gate-channel region through the substrate material.
3Manufacturing precision
If a separate process is used to form the temperature-measuring sensor, then the sensor can be independently optimized, but the manufacturing cost and process complexity increase
Solution Approach 1:
The patent merges the temperature-measuring sensor formation process with the existing semiconductor manufacturing process. The sensor is formed using the same semiconductor fabrication techniques and process steps as the main device components, eliminating the need for separate sensor fabrication processes and reducing overall manufacturing complexity while maintaining optimization capability.
4Measurement precision
If additional space is allocated for the temperature-measuring sensor, then the sensor can be properly positioned, but the device area increases
Solution Approach 1:
The patent resolves the space constraint by transitioning from a two-dimensional lateral arrangement to a three-dimensional vertical arrangement. The sensor is positioned on the lower surface of the substrate, utilizing the thickness dimension rather than lateral space, thereby achieving accurate thermal coupling to the gate-channel region without increasing the device footprint area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate and precise temperature measurement at the highest heat-generating source of the transistor, unaffected by external air temperatures, while reducing the number of processes and costs involved in sensor integration.
Implementation Method 1
a temperature-measuring sensor disposed on a partial region of the active layer... accurately measuring the temperature at a highest heat generating source of a transistor by disposing a temperature-measuring sensor adjacent to a gate-channel region
Data Source
AI summary
The present invention relates to a semiconductor device. A semiconductor device, according to the present invention, comprises: a semiconductor substrate; an active layer disposed on the semiconductor substrate; a transistor disposed on the active layer, and at least one temperature-measuring sensor disposed on a partial region of the active layer. Therein: the transistor comprises a drain electrode, a source electrode and a gate electrode, disposed on the semiconductor substrate; and the active layer comprises a channel region formed between the source electrode and the drain electrode on the top of the semiconductor substrate.