Transistor Die Layout Using Ancillary Regions for Higher Power
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Solution Overview
Problem
Existing power transistor devices face challenges in achieving higher amplification levels without increasing the size of the semiconductor die, leading to cost increments.
Innovation Solution
A multi-element transistor is integrally formed within a semiconductor die, incorporating primary and ancillary transistor elements arranged in parallel, with ancillary elements positioned in previously inactive regions of the die to enhance power generating capability without increasing die size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the size of power transistor semiconductor die is increased to achieve higher amplification levels, then the power generating capability is improved, but the manufacturing cost increases
Solution Approach 1:
The patent utilizes previously inactive or underutilized regions of the semiconductor die (ancillary regions) to place additional transistor elements. This effectively adds functional area in a dimension that was previously wasted space, thereby increasing power generating capability without increasing the overall die footprint.
Solution Approach 2:
The transistor elements are divided into primary elements and ancillary elements that can be independently designed and positioned. This segmentation allows the ancillary elements to be placed in previously inactive regions, maximizing space utilization and increasing total power output without expanding die size.
2Power
If more transistor elements are integrated into the semiconductor die to increase power output, then the power generating capability is improved, but the device complexity increases
Solution Approach 1:
The ancillary transistor elements perform the same fundamental function as primary elements (signal amplification), but are positioned in previously inactive regions. This multi-functional utilization of space allows increased power output without proportionally increasing control complexity, as the additional elements follow the same design paradigm.
Data Source
AI summary
A transistor die includes input and output terminals and a source through-substrate via (TSV) between the input and output terminals. First and second primary drain contacts extend from the output terminal toward the input terminal past first and second sides, respectively, of the source TSV. An ancillary region is located adjacent to the source TSV, and boundaries of the ancillary region are defined by the source TSV, the first and second drain contacts, and one of the input terminal or the output terminal. The transistor further includes a primary transistor element, including a primary drain contact, a primary source contact, and a primary gate structure, located outside of the first ancillary region, and an ancillary transistor element, including an ancillary drain contact, an ancillary source contact, and an ancillary gate structure, located within the ancillary region.