Transistor Channel Doping for EB Isolation and Leakage Control
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Solution Overview
Problem
Existing methods for transistor cell isolation in microelectronic devices, such as applying a voltage for electrical break (EB), do not provide sufficient blocking effect against leakage current, leading to high power consumption, especially in ultra-low power designs, and the adjustment of threshold voltage is limited.
Innovation Solution
Injecting doping ions of a different type into the channel of transistors in the EB region and the same type into transistors outside the EB region to modify the conductivity and threshold voltage, thereby enhancing isolation and reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrical break (EB) is used to implement transistor cell isolation by applying voltage to turn off transistors, then cell-to-cell isolation is achieved, but leakage current blocking effect is insufficient resulting in high overall power consumption
Solution Approach 1:
The patent applies different doping ion types to different regions: opposite-type doping ions are injected into transistors within the EB region to enhance isolation, while same-type doping ions are injected into transistors outside the EB region to maintain normal operation. This localized differentiation achieves strong isolation effect in the EB region without compromising overall device performance, effectively reducing leakage current and power consumption.
Solution Approach 2:
The patent modifies the threshold voltage parameter of transistors through controlled doping ion injection. By adjusting the doping concentration and ion type, the threshold voltage of transistors in the EB region is increased to enhance isolation, while transistors outside the EB region maintain their original threshold characteristics. This parameter adjustment enables sufficient leakage current blocking while maintaining low power consumption.
2Adaptability or versatility
If threshold voltage adjustment is made by adjusting metal work function of high-K metal gate or high-K dielectric, then threshold voltage can be modified, but adjustment range is limited making it impossible to reduce threshold voltage to lower level
Solution Approach 1:
The patent employs doping ion injection to directly modify the threshold voltage parameter of transistors. By controlling the doping ion type, concentration, and injection energy, the threshold voltage can be precisely adjusted over a wide range, including achieving lower threshold voltages that cannot be obtained through high-K metal gate or high-K dielectric adjustment alone. This provides greater adaptability for different circuit design requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces leakage current and lowers the driving voltage of transistors and chips by increasing the threshold voltage in the EB region and reducing it outside the region, optimizing power efficiency without increasing chip layout area.
Implementation Method 1
injecting, into a channel of at least one first transistor located in an electrical break (EB) region, doping ions of a different type from the first transistor, and/or injecting, into a channel of at least one second transistor located outside the EB region, doping ions of a same type as the second transistor
Data Source
AI summary
Embodiments of the present disclosure provide a method for manufacturing a transistor device, and a transistor device. The method for manufacturing a transistor device includes: injecting, into a channel of at least one first transistor located in an electrical break (EB) region, doping ions of a different type from the first transistor, and/or injecting, into a channel of at least one second transistor located outside the EB region, doping ions of a same type as the second transistor; and forming the transistor device based on the first transistor and the second transistor into which doping ions have been injected.