Semiconductor Layout for Transistor and Drive Circuit Integration

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Solution Overview

Problem

There is a need to implement a space-saving configuration for the first transistor device, level shifter, and drive circuit to drive a second transistor device in electronic circuits, particularly in half-bridge circuits, where the existing designs often lack efficient integration and space optimization.

Innovation Solution

The electronic circuit integrates a first transistor device in an inner region of a semiconductor body with a level shifter and drive circuit in edge regions, where the level shifter is positioned closer to the inner region than the drive circuit, allowing for a compact and efficient layout that optimizes space usage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If the first transistor device, level shifter, and drive circuit are integrated in separate regions of the semiconductor body, then the space-saving capability is improved, but the device complexity increases

Engineering Contradiction:
Improvesemiconductor body areaVSAvoidcircuit integration complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The semiconductor body is divided into distinct functional regions: an inner region for the first transistor device and edge regions for the level shifter and drive circuit. This segmentation allows each component to be optimally positioned and sized, reducing overall area while maintaining functional independence and simplifying the integration process.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the semiconductor body are assigned different functional qualities: the inner region accommodates the power transistor device requiring higher current handling, while the edge regions house the control circuits (level shifter and drive circuit) requiring lower current but precise signal processing. This local differentiation optimizes space utilization and reduces interference between components.

Inventive Principle:
Principle #3Local quality

2Speed

If the level shifter is positioned closer to the inner region than the drive circuit, then the signal transmission efficiency is improved, but the manufacturing precision requirements increase

Engineering Contradiction:
Improvesignal transmission speedVSAvoidregion positioning precision
Core Design Contradiction:
SpeedVSManufacturing precision

Solution Approach 1:

The level shifter is pre-positioned in the edge region adjacent to the inner region during the semiconductor fabrication process, establishing optimal signal transmission paths before final assembly. This preliminary positioning ensures minimal signal delay and reduced interference, while the standardized fabrication processes maintain acceptable manufacturing precision tolerances.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS11342467B2Electronic circuit with a transistor device, a level shifter and a drive circuit
Publication Date: 2022.05.24 INFINEON TECH DRESDEN GMBH & CO KG
  • US11342467B2 patent drawing
  • US11342467B2 patent drawing
  • US11342467B2 patent drawing

AI summary

An electronic circuit is disclosed. The electronic circuit includes: a first transistor device integrated in an inner region of a first semiconductor body; a level shifter integrated in a level shifter region of the first semiconductor body, the level shifter region located in an edge region surrounding the inner region of the semiconductor body; and a drive circuit integrated in a drive circuit region in the edge region of the first semiconductor body, the drive circuit configured to receive a first input signal from a first input and drive the first transistor device based on the first input signal, the drive circuit region arranged closer to the inner region than the level shifter region.