Transistor Electrode Opening Process for Low Parasitic Capacitance
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Solution Overview
Problem
Current transistor technologies face challenges in achieving a balance between low parasitic capacitance, high on-state current, and stable electrical characteristics, particularly in oxide semiconductor-based transistors, which affect their frequency and operational speed.
Innovation Solution
A method for fabricating transistors involving the formation of an electrode structure using specific plasma treatment and washing processes to create a metal oxide layer, followed by the deposition of a conductive layer within an opening in an insulating layer, which reduces parasitic capacitance and enhances on-state current while maintaining stable electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistor fabrication methods are used, then manufacturing simplicity is maintained, but parasitic capacitance increases and on-state current decreases
Solution Approach 1:
The patent applies preliminary action by performing plasma treatment on the metal surface before forming the insulating layer. This preliminary plasma treatment modifies the metal surface properties in advance, preventing excessive oxide formation later and reducing parasitic capacitance. The conductive layer is also formed in advance within the opening before final electrode assembly, ensuring proper electrical characteristics from the outset.
Solution Approach 2:
The patent employs parameter changes by controlling the plasma treatment conditions (power, gas flow, treatment time) to precisely regulate the oxide layer formation. By adjusting these parameters, the invention achieves optimal balance between preventing oxide formation (to reduce parasitic capacitance) and maintaining adequate adhesion (for stable electrical characteristics). The insulating layer thickness and composition are also optimized to achieve the desired electrical performance.
2Reliability
If plasma treatment is performed to reduce oxide formation, then parasitic capacitance decreases, but manufacturing precision requirements increase
Solution Approach 1:
The patent uses parameter changes to control oxide layer formation by optimizing plasma treatment parameters (power, gas flow rate, treatment duration). These parameter adjustments enable precise control over oxide thickness and composition, achieving low parasitic capacitance while maintaining manufacturing feasibility. The insulating layer parameters are also optimized to complement the plasma treatment effects.
Solution Approach 2:
The patent implements feedback control through systematic optimization of plasma treatment conditions based on measured electrical characteristics. By monitoring parasitic capacitance and on-state current, the fabrication parameters are adjusted to achieve the optimal balance between low parasitic capacitance and adequate adhesion, ensuring consistent electrical performance across production batches.
3Stability of the object's composition
If oxide layer is formed to improve adhesion, then electrical characteristics stabilize, but parasitic capacitance increases
Solution Approach 1:
The patent applies preliminary action by performing plasma treatment on the metal surface before insulating layer formation. This preliminary treatment creates a controlled surface state that provides adequate adhesion without requiring thick oxide layers. The plasma treatment modifies surface properties in advance, ensuring proper bonding while minimizing oxide-related parasitic capacitance.
Solution Approach 2:
The patent uses parameter changes to control oxide layer thickness and composition through optimized plasma treatment conditions. By adjusting plasma power, gas composition, and treatment time, the invention achieves the minimum necessary oxide formation for adhesion while preventing excessive oxide growth that would increase parasitic capacitance. The insulating layer parameters are also optimized to work synergistically with the plasma-treated surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in transistors with reduced parasitic capacitance, increased on-state current, and improved frequency characteristics, enabling faster and more stable operation.
Implementation Method 1
An oxide is formed over the first conductive layer in the opening by the plasma treatment in the fourth step. The plasma treatment is performed in an atmosphere containing oxygen in the fourth step. The oxide contains the metal element.
Implementation Method 2
The fourth step is a step of performing plasma treatment on at least the opening.
Implementation Method 3
The fifth step is a step of removing the oxide.
Data Source
AI summary
A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.