Transistor Electrode Segmentation to Inhibit Hot Carriers
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Solution Overview
Problem
Existing transistors in liquid crystal panels face issues with hot carrier occurrence and poor yield due to the concentration of electric fields and step formation in semiconductor layers.
Innovation Solution
A transistor design with a first electrode, a first semiconductor portion, a first insulating film, a second electrode, and a third electrode, where the electric potential of the second electrode is lower than that of the third electrode, and the third electrode has a structure with spaced portions to inhibit electron concentration and hot carrier occurrence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a multilayer structure of first wiring layer and first electrode layer is used for source electrode, then hot carrier occurrence is inhibited, but a step is formed in semiconductor layer and cut film failure is likely to occur
Solution Approach 1:
The source electrode is divided into two separate electrodes (second electrode and third electrode) that are spaced apart, eliminating the need for a multilayer structure. This segmentation approach maintains the beneficial electric field distribution while avoiding the step formation that causes film continuity issues in the semiconductor layer.
Solution Approach 2:
Instead of using a vertical multilayer structure (stacking first wiring layer and first electrode layer), the patent transitions to a horizontal arrangement where the second and third electrodes are positioned side-by-side in the same layer, spaced apart from each other. This dimensional change eliminates the step while maintaining the electrode functionality.
2Reliability
If end portions of first wiring layer and second wiring layer do not overlap gate electrode layer, then hot carrier occurrence is inhibited, but electric field concentration near electrode layers occurs
Solution Approach 1:
The patent applies different spatial arrangements to different electrodes: the second electrode is positioned to avoid overlapping the gate electrode layer (inhibiting hot carrier), while the third electrode is spaced apart from the second electrode to distribute the electric field. This local quality differentiation resolves both issues simultaneously.
Solution Approach 2:
The third electrode acts as an intermediary element that is positioned between the second electrode and the gate electrode layer. This intermediary structure helps distribute the electric field while maintaining the non-overlapping configuration that prevents hot carrier generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed transistor structure effectively inhibits hot carrier occurrence and ensures a good yield by reducing electron concentration and eliminating the multilayer structure that causes steps in semiconductor layers.
Implementation Method 1
a first insulating film that is interposed between the first electrode and the first semiconductor portion
Implementation Method 2
the third electrode includes a first portion that is spaced from the second electrode and a second portion that is spaced from the second electrode opposite the first portion
Data Source
AI summary
A transistor includes a first electrode, a first semiconductor portion that is at least partly superimposed on the first electrode and that is composed of a semiconductor material, a first insulating film that is interposed between the first electrode and the first semiconductor portion, a second electrode that is superimposed on a part of the first semiconductor portion and that is connected to the first semiconductor portion, and a third electrode that is located in a layer in which the second electrode is located, that is superimposed on a part of the first semiconductor portion, and that is connected to the first semiconductor portion. An electric potential of the second electrode is lower than that of the third electrode. The third electrode includes a first portion that is spaced from the second electrode and a second portion that is spaced from the second electrode opposite the first portion.