Transistor Manufacturing via Electroless Plating and Silane Base Film
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Solution Overview
Problem
Transistors manufactured using solution processes often experience hysteresis due to carrier trapping at the semiconductor-insulation film interface, limiting the freedom in selecting materials and structures to avoid this issue.
Innovation Solution
A transistor manufacturing method involving the formation of a fluorine-containing resin first insulator layer and a curable resin second insulator layer, with a plating base film for electroless plating, enhances adhesion and reduces hysteresis by using a silane coupling agent for smooth base films and optimizing electrode formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a solution process is used to manufacture transistors, then manufacturing cost is reduced and wafer size can be enlarged, but hysteresis occurs due to carrier trapping at the semiconductor-insulation film interface
Solution Approach 1:
The patent introduces an intermediary substance (silane coupling agent) between the insulation film and the semiconductor layer to prevent direct contact and eliminate carrier trapping. The silane coupling agent forms a base film that acts as a mediator, allowing the insulation film to adhere to the substrate while preventing harmful interactions at the interface, thus resolving the hysteresis issue while maintaining solution process manufacturing
Solution Approach 2:
The patent extracts the problematic interface between the insulation film and semiconductor by removing the direct contact between these two layers. Instead of allowing the insulation film to contact the semiconductor directly, the invention extracts this harmful interface by inserting a silane coupling agent layer, thereby eliminating the carrier trapping mechanism that causes hysteresis
2Adaptability or versatility
If electroless plating is used on resin or glass substrates, then plating can be applied to nonconductor materials, but adhesion is poor and the plating film easily causes abrasion due to internal stress
Solution Approach 1:
The silane coupling agent acts as an intermediary layer between the resin/glass substrate and the electroless plating film. This mediator provides chemical groups that enhance adhesion to both the substrate and the metal plating, resolving the poor adhesion issue while maintaining the ability to plate nonconductor materials
Solution Approach 2:
The patent applies local quality by creating a base film with specific chemical properties (silane coupling agent) at the interface region where adhesion is needed. This localized treatment provides enhanced bonding characteristics specifically at the substrate-plating interface without affecting the bulk properties of the substrate or plating film
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in transistors with stable operation behavior and reduced hysteresis, maintaining high performance and optical transparency while preventing carrier trapping.
Implementation Method 1
a base film that consists of a filler component such as a fine powder silica and a resin composition component is provided on a substrate surface and electroless plating is applied on the base film
Implementation Method 2
chemical plating (electroless plating) can be used which is a plating method that utilizes reduction of a material surface according to a contact action
Implementation Method 3
forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate on which a source electrode, a drain electrode, and an organic semiconductor layer are formed
Data Source
AI summary
A transistor manufacturing method includes: forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate having a source electrode, a drain electrode, and a semiconductor layer so as to cover the semiconductor layer; forming a second insulator layer to cover the first insulator layer; forming a base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the base film, forming a gate electrode on the surface of the base film by electroless plating, wherein the forming of the base film is performed by applying a liquid substance which is a formation material of the base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.