Transistor-Level Fault Simulation Defect Injection

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Solution Overview

Problem

Current fault simulation methods for integrated circuits are inefficient, particularly in analog and mixed-signal circuits, as they often require extensive simulation times and may not accurately inject defects that are more likely to occur due to manufacturing processes, such as shorts and opens between adjacent nodes, which are difficult to predict without layout information.

Innovation Solution

The method involves selecting circuit elements for defect injection based on their type and netlist level, with different defects injected for design-intent and parasitic elements, allowing for faster simulation by using layout information when available and design-intent netlists when layout information is not, thereby focusing on more likely defects without simulating all possible variations in parasitic elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If fault simulation is performed by injecting all possible defects into transistor-level netlists, then measurement precision and reliability of fault detection are improved, but simulation time increases significantly

Engineering Contradiction:
Improvefault detection accuracyVSAvoidsimulation time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent segments the fault simulation process into distinct phases: defect injection phase using high-level netlists for speed, and verification phase using transistor-level netlists for accuracy. This segmentation allows the system to benefit from both fast high-level simulation and accurate low-level simulation without combining their drawbacks

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies partial action by injecting only the most critical and likely defects into transistor-level netlists rather than all possible defects. High-level netlists are used to identify and prioritize defects that are most likely to occur or have the greatest impact, reducing the number of transistor-level simulations needed

Inventive Principle:
Principle #16Partial or excessive action

2Manufacturing precision

If layout information is used to guide defect injection, then manufacturing precision of defect modeling is improved, but device complexity increases due to requiring multiple netlist levels

Engineering Contradiction:
Improvedefect injection accuracyVSAvoidnetlist management complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent implements a dynamic netlist selection mechanism that automatically chooses between high-level and low-level netlists based on the simulation stage and available layout information. The system adapts its complexity level rather than being statically tied to one netlist type, optimizing both accuracy and manageability

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent introduces an intermediary defect injection engine that translates layout information into targeted defect injections on appropriate netlist levels. This intermediary layer manages the complexity of coordinating multiple netlist levels by providing a unified interface for defect injection across different abstraction levels

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If all circuit elements are selected for defect injection, then fault coverage is improved, but simulation time increases due to processing more elements

Engineering Contradiction:
Improvefault coverageVSAvoidsimulation throughput
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies local quality by differentiating defect injection strategies for different circuit elements and netlist levels. Critical elements identified through high-level simulation receive detailed transistor-level defect injection, while less critical elements are handled at the higher level, optimizing resource allocation across the circuit

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS9372946B2Defect injection for transistor-level fault simulation
Publication Date: 2016.06.21 SIEMENS INDUSTRY SOFTWARE INC
  • US9372946B2 patent drawing
  • US9372946B2 patent drawing
  • US9372946B2 patent drawing

AI summary

Aspects of the invention relate to techniques of defect injection for transistor-level fault simulation. A circuit element in a circuit netlist of a circuit is first selected for defect injection. Next, a defect is determined based on whether the selected circuit element is a design-intent circuit element or a parasitic circuit element. After the defect is determined, the defect is injected into the circuit netlist and then the circuit is simulated.