Transistor Flicker Noise Reduction via Dielectric Optimization and Forward Body-Bias

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Solution Overview

Problem

Flicker noise in semiconductor devices, particularly in low-frequency spectral regions, deteriorates the performance of non-linear circuits such as frequency mixers and voltage controlled oscillators, limiting signal-to-noise performance and requiring effective noise mitigation techniques.

Innovation Solution

The implementation of an active device with an optimized dielectric material and a combination of switched bias and forward body-bias signals, where the dielectric material's thickness and relative dielectric constant are selected to reduce flicker noise below a threshold level, and the forward body-bias is applied during the transistor's 'off' state to minimize noise emission.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional transistors are used without optimized dielectric material, then device complexity is low, but flicker noise is high which deteriorates signal-to-noise performance

Engineering Contradiction:
Improvesignal-to-noise performanceVSAvoiddielectric material optimization
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by optimizing the dielectric material's thickness and relative dielectric constant to reduce flicker noise. Specifically, the dielectric layer thickness is controlled within 1-5 nm and the relative dielectric constant is optimized to achieve minimum noise levels while maintaining device functionality.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite materials by using a dielectric material layer with specific properties (thickness of 1-5 nm and optimized relative dielectric constant) between the gate and channel, creating a composite structure that reduces flicker noise while maintaining transistor operation.

Inventive Principle:
Principle #40Composite materials

2Reliability

If forward body-bias is applied continuously, then flicker noise is reduced, but current consumption increases

Engineering Contradiction:
Improveflicker noise reductionVSAvoidcurrent consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent implements periodic action by applying forward body-bias only during the transistor's off-state rather than continuously. This periodic application reduces flicker noise when the transistor is not conducting while minimizing current consumption during the on-state when noise reduction is less critical.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent uses preliminary action by applying forward body-bias during the off-state before the transistor switches to on-state. This preliminary noise reduction occurs when the transistor is not drawing significant current, thereby reducing overall power consumption while still achieving noise mitigation.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If dielectric thickness is reduced to minimize noise, then flicker noise decreases, but operating speed may be affected

Engineering Contradiction:
Improveflicker noise levelVSAvoidoperating speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent optimizes the dielectric thickness parameter within a specific range (1-5 nm) to achieve the optimal balance between noise reduction and speed performance. This precise parameter control ensures minimum flicker noise while maintaining adequate operating speed for the transistor's function.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces flicker noise, improving the performance and reliability of semiconductor devices by lowering current consumption and maintaining signal quality, while optimizing dielectric thickness for balanced operating speed and noise reduction.

Implementation Method 1

a dielectric material defined by a thickness and a relative dielectric constant selected such that a flicker noise characteristic of the active device is reduced below a threshold level

Methodology Applied
Scientific EffectFlicker noise reduction:

Implementation Method 2

a forward body-bias signal... The forward body-bias is applied during the transistor's 'off' state to minimize noise emission

Methodology Applied
Scientific EffectForward body-bias effect:

Data Source

PatentUS7897956B2Biasing a transistor out of a supply voltage range
Publication Date: 2011.03.01 INFINEON TECHNOLOGIES AG
  • US7897956B2 patent drawing
  • US7897956B2 patent drawing
  • US7897956B2 patent drawing

AI summary

The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.