Transistor Gate Extension Structure for Current Double Hump Reduction
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Solution Overview
Problem
Transistor devices experience a current double hump effect in the edge regions of the gate, leading to negative impacts on electrical properties.
Innovation Solution
The transistor structure incorporates extension portions adjacent to the gate sides with materials differing from the body portion, increasing their width and resistance, thereby improving channel resistance and threshold voltage in these regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate width is increased in the edge regions to improve channel resistance, then the electrical properties are improved, but the current double hump effect occurs more easily
Solution Approach 1:
The gate structure employs different materials for different regions: the body portion uses one material while the extension portions at the edges use a different material. This local differentiation allows the edge regions to have higher resistance characteristics that counteract the current double hump effect, while the central region maintains optimal conduction properties.
Solution Approach 2:
The gate structure introduces asymmetry by adding extension portions that protrude from the body portion at the edge regions. These extension portions create an asymmetric width distribution where the gate is wider at the edges than in the center, which helps distribute current more uniformly and reduce the double hump effect.
2Reliability
If extension portions with different material are added to the gate edges, then channel resistance and threshold voltage are improved, but the device structure becomes more complex
Solution Approach 1:
The gate is segmented into distinct functional portions: a body portion for primary conduction and extension portions for edge region control. This segmentation allows each portion to be optimized independently with appropriate materials and dimensions to achieve the desired electrical characteristics.
Solution Approach 2:
The gate structure uses composite materials with different electrical properties in different regions. The body portion and extension portions utilize materials with different resistivities, allowing the extension portions to provide higher resistance for threshold voltage control while the body portion provides low resistance for current conduction.
Data Source
AI summary
A transistor structure and a manufacturing method thereof are provided. In the transistor structure, the substrate has an active area (AA); the gate including a body portion, a first extension portion and a second extension portion is disposed on the substrate in the AA; the first and second extension portions are connected to the body portion extending in a first direction; the first extension portion is located at the first side of the AA and partially overlaps the AA; the second extension portion is located at the second side of the AA and partially overlaps the AA; the material of the first and second extension portions is different from that of the body portion; the first and the second doped regions are disposed in the substrate at two sides of the gate in a second direction; the gate dielectric layer is disposed between the gate and the substrate.