Transistor Gate Drive Circuit for TVS Overvoltage Protection
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Solution Overview
Problem
Existing transistor control circuits are inefficient in managing voltage peaks, particularly with transient voltage suppression diodes, which can be damaged by high overvoltages, leading to potential circuit failure and size constraints due to the need for larger diodes to handle dissipated power.
Innovation Solution
A control circuit incorporating a transient voltage suppression diode with a breakdown voltage greater than 20 V, a MOS or bipolar transistor, and additional resistors and capacitors to distribute the power dissipation across multiple components, including a rectifier diode to prevent control current circulation, allowing for efficient overvoltage handling and minimizing diode size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transient voltage suppression diode is used to protect against voltage spikes, then the transistor is protected against overvoltages, but the diode can be damaged by high overvoltages and requires larger size to handle dissipated power
Solution Approach 1:
The patent divides the power dissipation function into multiple components: the TVS diode handles voltage clamping while auxiliary components (resistors, transistors, diodes) share the power dissipation burden. This segmentation allows the TVS diode to be smaller and less stressed, reducing damage risk while maintaining protection effectiveness.
Solution Approach 2:
The patent introduces auxiliary components as intermediaries between the TVS diode and the high overvoltage energy. These components (resistors, transistors, diodes) act as mediators that distribute and manage the power dissipation, protecting the TVS diode from direct exposure to excessive power while maintaining the protection function.
2Reliability
If a larger transient voltage suppression diode is used to handle higher power dissipation, then the diode can withstand higher overvoltages, but the circuit size increases
Solution Approach 1:
The patent segments the power handling function across multiple smaller components rather than using one large TVS diode. The auxiliary components (resistors, transistors, diodes) collectively handle the power dissipation, allowing the TVS diode to be smaller and the overall circuit to be more compact while maintaining the same protection capability.
3Device complexity
If conventional transistor control circuits are used, then the circuit structure is simple, but the efficiency in managing voltage peaks is poor
Solution Approach 1:
The patent introduces auxiliary components as intermediaries that actively manage voltage peaks. The transistor and diode combinations act as mediators that redirect and dissipate excess voltage energy, improving voltage peak management efficiency while adding controlled complexity to the circuit structure.
Solution Approach 2:
The patent changes the operational parameters of the circuit components to optimize voltage peak management. By configuring specific resistor values, transistor operating points, and diode selection, the circuit achieves superior voltage spike handling efficiency compared to conventional designs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the electrical power dissipated by the transient voltage suppression diode by a factor of 3 to 5 compared to conventional circuits, preventing diode damage and minimizing circuit size while ensuring efficient overvoltage management.
Implementation Method 1
a transient voltage suppression diode, also known as a TVS diode. This is a diode made of a semiconductor material that limits surges by avalanche effect for the purpose of protecting an electronic circuit
Data Source
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AI summary
The present description relates to a control circuit (100) of a first transistor (150) comprising: - a transient voltage suppression diode (D1) whose cathode is adapted to be connected to a first conduction terminal of the first transistor (150), and whose anode is connected to a first node (A); - a first resistor (R2) adapted to connect the first node (A) to a control terminal of the first transistor (150); - a second transistor (T1) whose control terminal is connected to the first node (A), whose first conduction terminal is adapted to receive a first supply voltage (VCC), and whose second conduction terminal is adapted to be connected to the control terminal of the first transistor (150), in which the supply voltage (VCC) is less than 20 V.