Transistor Gate Resistor Segmentation for Adjustable Switching Speeds

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Insulated gate power transistor devices have fixed resistance values between the gate node and gate-source capacitance, limiting their adaptability to different applications requiring varying switching speeds.

Innovation Solution

A semiconductor chip with multiple gate pads and resistor arrangements, each providing a different electrical resistance, allowing for adjustable switching speeds by selecting the appropriate resistor for the specific application.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a fixed resistance value is preset in the semiconductor chip, then the transistor device can be manufactured with a determined switching speed, but it cannot be adapted to different applications requiring different switching speeds

Engineering Contradiction:
Improveadaptability to different applicationsVSAvoidcomplexity of resistor configuration
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The gate resistor is divided into multiple discrete resistance segments (first gate resistor segment, second gate resistor segment, third gate resistor segment) that can be independently selected and connected. This segmentation allows the transistor device to provide multiple different resistance values between the gate node and gate-source capacitance, enabling adaptation to different switching speed requirements without increasing overall device complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements a dynamic resistance selection mechanism where different gate resistor segments can be selectively connected or disconnected based on application requirements. This dynamic configuration allows the same semiconductor chip to be used across multiple applications with different switching speed needs, transforming a static fixed-resistance design into a flexible multi-resistance solution.

Inventive Principle:
Principle #15Dynamics

2Adaptability or versatility

If different resistance values are provided for different switching speeds, then applications with varying switching speed requirements can be satisfied, but the device structure becomes more complex

Engineering Contradiction:
Improveswitching speed adjustment capabilityVSAvoidnumber of resistor arrangements
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

Multiple gate resistor segments are merged into a single integrated structure within the semiconductor chip, sharing common connection points and utilizing the same manufacturing process. This merging approach allows multiple resistance values to be provided without proportionally increasing device complexity, as the resistor segments share structural elements and can be selectively activated through switching mechanisms.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The gate resistor structure is designed with multi-functionality, where the same physical structure serves multiple resistance value functions. The resistor segments can be selectively connected to provide different total resistance values, allowing a single semiconductor chip design to serve multiple applications with different switching speed requirements, thereby reducing the need for multiple specialized chips.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the use of a single semiconductor chip in various applications by allowing for customizable switching speeds through the selection of different resistors, enhancing flexibility and suitability for diverse electronic applications.

Implementation Method 1

each of the plurality of resistor arrangements has an electrical resistance, wherein the resistances of the plurality of resistor arrangements are different

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Data Source

PatentUS10811529B2Transistor device with gate resistor
Publication Date: 2020.10.20 INFINEON TECH AUSTRIA AG
  • US10811529B2 patent drawing
  • US10811529B2 patent drawing
  • US10811529B2 patent drawing

AI summary

A transistor device comprises at least one gate electrode, a gate runner connected to the at least one gate electrode and arranged on top of a semiconductor body, a plurality of gate pads arranged on top of the semiconductor body, and a plurality of resistor arrangements. Each gate pad is electrically connected to the gate runner via a respective one of the plurality of resistor arrangements, and each of the resistor arrangements has an electrical resistance, wherein the resistances of the plurality of resistor arrangements are different.