Transistor Gate Structure with Sidewall Dielectric Insulation
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Solution Overview
Problem
Traditional transistors face challenges with high leakage currents, especially when coupled to capacitive elements like DRAM, leading to energy loss and performance limitations in electronic devices due to variability in channel length during manufacturing.
Innovation Solution
The design incorporates a bottom gate created using a self-aligning process, with a first dielectric layer along the sides of the gate and under the source and drain, allowing only electron conduction and reducing leakage by using a larger bandgap oxide layer, thereby insulating the gate from the channel, source, and drain.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional transistors are used, then manufacturing is simpler, but leakage current is high and reliability is poor
Solution Approach 1:
The gate structure is segmented into multiple functional layers: a bottom gate electrode, a gate dielectric layer, and sidewall dielectric layers. This segmentation allows each layer to perform its specific function independently, achieving low leakage current through the combined effect of multiple insulating barriers while maintaining a systematic manufacturing approach.
Solution Approach 2:
The gate dielectric layer acts as an intermediary between the gate electrode and the channel, preventing direct electrical contact and reducing leakage current. The sidewall dielectric layers serve as intermediaries that insulate the gate structure from adjacent regions, further suppressing unwanted current paths.
2Productivity
If channel length is reduced for scaling, then device density improves, but manufacturing precision requirements increase and leakage control becomes more difficult
Solution Approach 1:
The invention transitions from a planar gate structure to a three-dimensional structure with sidewall dielectric layers extending vertically along the gate. This dimensional change allows for better electrostatic control and leakage suppression without further reducing the horizontal channel length, thereby maintaining manufacturing precision while achieving device scaling benefits.
3Reliability
If conventional gate structures are used, then device complexity is lower, but electrostatic control and leakage reduction are insufficient
Solution Approach 1:
The gate structure employs composite dielectric configurations with different dielectric materials in the gate dielectric layer and sidewall dielectric layers. This composite approach optimizes electrostatic control by selecting materials with appropriate dielectric constants for different functional regions, achieving superior leakage control and electrostatics while managing the complexity through systematic material selection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves low leakage currents, enhances electrostatics, and improves performance by reliably controlling subthreshold leakage, even at scaled dimensions, thus improving the reliability and efficiency of transistors in electronic devices.
Implementation Method 1
the first dielectric and the gate dielectric insulate the gate from the channel, the source, and the drain
Implementation Method 2
reducing leakage by using a larger bandgap oxide layer
Data Source
AI summary
Substrates, assemblies, and techniques for an apparatus, where the apparatus includes a gate, where the gate includes a first gate side and a second gate side opposite to the first gate side, a gate dielectric on the gate, where the gate dielectric includes a first gate dielectric side and a second gate dielectric side opposite to the first gate dielectric side, a first dielectric, where the first dielectric abuts the first gate side, the first gate dielectric side, the second gate side, and the second gate dielectric side, a channel, where the gate dielectric is between the channel and the gate, a source coupled with the channel, and a drain coupled with the channel, where the first dielectric abuts the source and the drain. In an example, the first dielectric and the gate dielectric help insulate the gate from the channel, the source, and the drain.