Transistor Gate Control Circuit for TVS Surge Dissipation
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Solution Overview
Problem
Existing transistor control circuits are inefficient in managing transient voltages and often result in damage to Transient Voltage Suppressor (TVS) diodes due to high voltage surges, necessitating larger diodes to handle the power dissipation, which increases circuit congestion.
Innovation Solution
A control circuit design incorporating a TVS diode with a breakdown voltage of 20 V or higher, coupled with a MOS-type or bipolar-type transistor, resistors, and a rectifier diode to manage transient voltages, distributing power dissipation across multiple components, including a capacitor, to protect the transistor and minimize diode size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a TVS diode is used to suppress transient voltages, then the transistor is protected against voltage peaks, but the diode suffers damage from high voltage surges and requires larger size to handle power dissipation
Solution Approach 1:
The patent divides the power dissipation function into multiple components: the TVS diode handles voltage suppression while auxiliary components (resistors, capacitors, transistors) share the power dissipation burden. This segmentation allows the TVS diode to be smaller and less stressed, improving its durability while maintaining protection effectiveness.
Solution Approach 2:
The patent introduces intermediary components (resistors, capacitors, transistors) between the TVS diode and the transient voltage source. These intermediaries absorb and distribute the energy from voltage surges, reducing the direct stress on the TVS diode and preventing its damage from high power dissipation.
2Reliability
If a larger TVS diode is used to handle power dissipation, then the diode can withstand higher voltage surges, but circuit congestion increases
Solution Approach 1:
Instead of using a single large TVS diode, the patent segments the protection function across multiple smaller components. This allows the circuit to handle high power dissipation without requiring a large diode, thereby reducing circuit congestion and improving layout flexibility.
Solution Approach 2:
The patent combines multiple components (TVS diode, resistors, capacitors, transistors) into an integrated protection circuit that collectively handles voltage surge suppression. This merged approach distributes the power handling capability across components, avoiding the need for a single large diode and reducing overall circuit congestion.
3Reliability
If the TVS diode breakdown voltage is set high to handle voltage surges, then the diode can suppress higher transient voltages, but power dissipation in the diode increases
Solution Approach 1:
The patent introduces intermediary components (resistors, capacitors, transistors) that share the power dissipation burden when the TVS diode suppresses high voltage surges. These intermediaries absorb excess energy, reducing the power dissipation in the diode itself while maintaining effective voltage suppression capability.
Solution Approach 2:
The patent segments the energy dissipation function across multiple components rather than concentrating it in the TVS diode. This allows the diode to maintain high breakdown voltage for effective surge suppression while auxiliary components handle the associated power dissipation, reducing energy loss in the diode.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces power dissipation in the TVS diode by a factor of 3 to 5, preventing diode damage and minimizing circuit congestion while efficiently handling voltage surges.
Implementation Method 1
It is a diode made in a semiconductor material restricting the voltage surges by avalanche effect in order to protect an electronic circuit
Data Source
AI summary
A control circuit for controlling a first transistor includes a diode for suppressing transient voltages. A cathode of the diode is coupled to a first conduction terminal of the first transistor, and an anode of the diode is coupled to a first node. A first resistor is coupled between the first node and a control terminal of the first transistor. A second transistor has a control terminal coupled to the first node, a first conduction terminal configured to receive a first supply voltage, and a second conduction terminal coupled to the control terminal of the first transistor.