Transistor Hydrogen Discharge Paths for Channel and Threshold Stability
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Solution Overview
Problem
Existing transistors face issues with hydrogen diffusion leading to channel length variations and threshold voltage fluctuations, particularly in wide-width transistors used in high-power applications, which affect reliability and stability.
Innovation Solution
The transistor design includes hydrogen discharge paths outside the channel, with varying densities near the edge and center regions to manage channel length variations and prevent threshold voltage fluctuations, using contact holes as hydrogen discharge paths during the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen discharge paths are provided outside the channel of the active layer, then reliability is enhanced by preventing channel length variations, but device complexity increases due to additional structural elements
Solution Approach 1:
The hydrogen discharge paths are segmented into multiple regions with different densities corresponding to different regions of the active layer (central region vs. edge region). This segmentation allows targeted hydrogen management in specific areas without requiring uniform structural modifications throughout the entire device, thereby enhancing reliability while controlling complexity.
Solution Approach 2:
Different densities of hydrogen discharge paths are implemented in different regions of the active layer. The central region has a higher density of discharge paths compared to the edge region, creating local quality variations that address hydrogen diffusion issues specifically where they occur most severely, without unnecessarily complicating the entire transistor structure.
2Manufacturing precision
If hydrogen discharge paths are disposed at different densities in central and edge regions, then channel length variation is controlled, but manufacturing precision requirements increase
Solution Approach 1:
The invention implements different densities of hydrogen discharge paths in the central region versus the edge region of the active layer. This local quality differentiation allows precise control of channel length variations in the critical central area while using fewer discharge paths in the edge region, achieving good manufacturing precision without excessively complicating the manufacturing process.
3Power
If wide-width transistor is used for high-power operation, then power capability is improved, but sensitivity to channel width variation increases leading to threshold voltage fluctuation
Solution Approach 1:
Hydrogen discharge paths are provided outside the channel region in advance, before operation begins. These pre-positioned discharge paths prevent hydrogen diffusion that would otherwise cause channel length variations and threshold voltage fluctuations in wide-width transistors, thereby counteracting the inherent sensitivity to width variations before they can affect device performance.
Solution Approach 2:
The hydrogen discharge paths are formed during the manufacturing process before the transistor is put into operation. This preliminary action ensures that hydrogen diffusion issues are addressed before the transistor begins high-power operation, preventing threshold voltage fluctuations from the outset and ensuring stable performance throughout the device lifetime.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances transistor reliability by preventing effective channel length variations and threshold voltage fluctuations, allowing for high-power operation with reduced sensitivity to channel width changes, thus improving the performance and stability of display devices.
Implementation Method 1
provision of hydrogen discharge paths at an outside of a channel of an active layer
Data Source
AI summary
A transistor and a display device including the same are discussed. The transistor can include an active layer, a gate electrode having a region overlapping with the active layer, a gate insulating layer disposed between the active layer and the gate electrode, and a plurality of holes in the gate insulating layer at an outside of the overlap area between the gate electrode and the active layer.