Transistor Hydrogen Absorption Layers for Leakage Control
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Solution Overview
Problem
Hydrogen doping during metal formation processes in semiconductor devices leads to increased leakage and contact resistance, resulting in slower writing and reading speeds due to hydrogen diffusion into the active channel.
Innovation Solution
Incorporation of hydrogen absorption layers in the semiconductor device structure to prevent hydrogen from entering the active channel, achieved by positioning hydrogen absorption layers between the drain and source, and using multi-layered active channels with specific material compositions and configurations to enhance conductivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen doping is performed during metal formation process, then metal conductivity is improved, but hydrogen diffuses into the active channel causing increased leakage and reduced reliability
Solution Approach 1:
A hydrogen absorption layer is introduced as an intermediary between the metal layer and the active channel. This layer selectively absorbs hydrogen atoms during the metal formation process, preventing them from diffusing into the active channel while allowing the metal deposition to proceed normally. The absorption layer acts as a filter that captures harmful hydrogen species before they can reach the sensitive transistor channel region.
Solution Approach 2:
The harmful hydrogen atoms that would otherwise diffuse into the active channel and cause leakage are instead utilized to fill vacancies and defects within the hydrogen absorption layer itself. By positioning the absorption layer strategically, the potentially harmful hydrogen doping effect is redirected to benefit the absorption layer structure, transforming a harmful byproduct into a useful defect-healing mechanism.
2Reliability
If hydrogen absorption layer is added to prevent hydrogen diffusion, then leakage is reduced and reliability is improved, but device complexity and manufacturing steps increase
Solution Approach 1:
The hydrogen absorption layer is merged with existing device structures such as the interlayer dielectric or spacer regions. By integrating the absorption layer into already-present structural elements rather than adding completely separate components, the patent reduces the increase in device complexity. The absorption functionality is combined with structural elements that are necessary for other device functions.
Solution Approach 2:
The hydrogen absorption layer is designed to serve multiple functions: it prevents hydrogen diffusion into the active channel, provides a physical spacer between metal and channel regions, and can serve as part of the insulating dielectric structure. This multi-functionality reduces the need for additional separate layers or components, thereby limiting the increase in device complexity.
3Productivity
If multi-layered active channel with specific material composition is used, then conductivity is enhanced and writing/reading speeds are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs standard semiconductor fabrication techniques such as atomic layer deposition (ALD) and chemical vapor deposition (CVD) to control the thickness and composition of each layer in the multi-layered active channel. By using established deposition processes with well-understood parameter ranges, the patent achieves the required material precision without introducing entirely new manufacturing methods, thereby managing the increase in manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hydrogen absorption layers reduce current leakage and increase conductivity, leading to improved transistor performance with enhanced writing and reading speeds.
Implementation Method 1
the hydrogen absorption layer may absorb the hydrogen to prevent the hydrogen from entering active channel
Data Source
AI summary
A semiconductor device includes a substrate, a transistor on the substrate and a transistor formed on the substrate. The transistor includes an active channel, a drain, a source, a second hydrogen absorption layer and a first hydrogen absorption layer. The active channel has a first end surface and a second end surface opposite to the first end surface. The drain is disposed adjacent to the first end surface of the active channel. The source is disposed adjacent to the second end surface of the active channel. The second hydrogen absorption layer separates the drain from the first end surface of the active channel. The first hydrogen absorption layer separates the source from the second end surface of the active channel.