Transistor Implant Screen for Shared Dose Breakdown Control
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Solution Overview
Problem
The existing transistor manufacturing processes require multiple implant steps to achieve different implant dose concentrations in various regions, leading to reduced efficiency and increased costs due to the need for separate dopant implant steps for transistors with different breakdown voltage requirements.
Innovation Solution
The implementation of implant screens in certain regions of transistors, such as the contact-to-gate and contact-to-active area edge regions, which block dopant implants and allow for a shared dopant concentration across different transistors or regions, reducing the effective dose and shifting the acceptable dose range to match higher requirements without additional implant steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple implant steps are used to achieve different implant dose concentrations in various regions, then the breakdown voltage requirements for different transistors can be met, but the manufacturing efficiency is reduced and costs increase
Solution Approach 1:
The transistor structure is segmented into different regions (C2G region and C2A region) with different implant dose requirements. By using an implant screen structure that includes a first implant screen for the C2G region and a second implant screen for the C2A region, the patent enables selective doping in different areas during a single implant step, thereby maintaining precise dose control while improving manufacturing efficiency
Solution Approach 2:
The implant screen structure provides locally different implant dose concentrations to different regions of the transistor. The first implant screen region blocks implants in the C2G area while allowing them in the C2A area, and vice versa for the second implant screen region. This local differentiation allows each region to receive its specific required dose without requiring separate implant steps for the entire transistor
2Manufacturing precision
If multiple implant steps are used to achieve different implant dose concentrations in various regions, then the breakdown voltage requirements for different transistors can be met, but the manufacturing complexity and costs increase
Solution Approach 1:
The patent merges multiple implant operations into a single implant step by combining multiple implant screens into one integrated structure. The implant screen includes both the first implant screen (for C2G region control) and the second implant screen (for C2A region control) that work together during one dopant implant process, thereby reducing the number of separate implant steps and associated masking operations
Solution Approach 2:
The implant screen structure serves multiple functions simultaneously: it acts as a mask for selective doping, provides region-specific dose control, and enables both C2G and C2A regions to receive their respective implant doses in a single step. This multi-functionality reduces the overall manufacturing process complexity by eliminating the need for separate dedicated implant steps for each region
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables transistors to achieve desired breakdown voltage values with a shared dopant concentration, reducing manufacturing complexity and costs by eliminating the need for separate implant steps and overlapping acceptable dose ranges, thereby enhancing efficiency and cost-effectiveness.
Implementation Method 1
implant screens in certain regions of transistors, such as the contact-to-gate and contact-to-active area edge regions, which block dopant implants and allow for a shared dopant concentration
Data Source
AI summary
An apparatus includes a substrate and a transistor disposed on the substrate. The transistor includes a source and a source contact disposed on the source. The transistor also includes a drain and a drain contact disposed on the drain. A gate is disposed between the source contact and the drain contact, and a screened region is disposed adjacent the source contact or the drain contact. The screened region corresponds to a lightly doped region. The screened region includes an implant screen configured to reduce an effective dose in the screened region so as to shift an acceptable dose range of the screened region to a higher dose range. The acceptable dose range corresponds to acceptable breakdown voltage values for the screened region.