High-Voltage Transistor Isolation Structure for Breakdown Tuning
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Solution Overview
Problem
Current high voltage transistor devices face challenges in increasing breakdown voltage as electronic devices shrink, requiring innovative structural designs to enhance voltage handling capabilities.
Innovation Solution
The high voltage transistor structure incorporates multiple isolation structures with varying depths and widths, with the first isolation structure having a greater depth and/or width than subsequent structures, positioned between source and drain regions, to increase breakdown voltage and allow for flexible adjustment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of electronic devices continues to shrink, then device miniaturization is achieved, but the breakdown voltage of high voltage transistor devices becomes more difficult to increase
Solution Approach 1:
The isolation structure is divided into multiple segments with different depths: a first isolation structure with greater depth and a second isolation structure with lesser depth. This segmentation allows each portion to serve different functions - the deeper structure provides voltage breakdown protection while the shallower structure enables device miniaturization and integration.
Solution Approach 2:
Different regions of the isolation structure are given different depths and characteristics. The first isolation structure has greater depth to handle high voltage breakdown, while the second isolation structure has lesser depth to accommodate compact device layout. This local differentiation resolves the contradiction between miniaturization and voltage handling.
2Reliability
If the depth of isolation structure is increased, then breakdown voltage is improved, but device area and complexity increase
Solution Approach 1:
The isolation structure is segmented into multiple portions with different depths positioned at different locations. This allows the high breakdown voltage function to be achieved locally where needed without requiring the entire device area to be expanded.
Solution Approach 2:
The isolation structure employs asymmetric depth configuration where the first isolation structure has greater depth than the second isolation structure. This asymmetric design optimizes the balance between breakdown voltage performance and device area utilization.
Data Source
AI summary
A high voltage transistor structure including a substrate, a first isolation structure, a second isolation structure, a gate structure, a first source and drain region, and a second source and drain region is provided. The first isolation structure and the second isolation structure are disposed in the substrate. The gate structure is disposed on the substrate, at least a portion of the first isolation structure, and at least a portion of the second isolation structure. The first source and drain region and the second source and drain region are located in the substrate on two sides of the first isolation structure and the second isolation structure. The depth of the first isolation structure is greater than the depth of the second isolation structure.