Semiconductor Transistor Isolation Layout for Higher Integration

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Solution Overview

Problem

Existing semiconductor devices face challenges in improving integration and miniaturization due to impurity diffusion issues between adjacent transistors, which affect electrical characteristics and require larger spacing, limiting the integration degree.

Innovation Solution

The semiconductor device incorporates a first insulating portion between gate electrodes of adjacent transistors, formed of a material with a lower dielectric constant, and a second insulating portion covering the transistors, allowing for closer placement and reducing impurity diffusion, thus enhancing integration without the need for lithographic cuts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If transistors are placed closer together to improve integration degree, then integration degree is improved, but impurity diffusion between adjacent transistors increases causing electrical characteristic degradation

Engineering Contradiction:

Improveintegration degreeVSAvoidelectrical characteristics

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

A first insulating portion is introduced as an intermediary structure between adjacent gate electrodes to prevent impurity diffusion. This mediator physically separates the adjacent transistors, allowing them to be placed closer together while maintaining electrical isolation and preventing cross-contamination of dopants between neighboring devices.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The insulating structure is segmented into two distinct portions: a first insulating portion positioned between adjacent gate electrodes to prevent lateral impurity diffusion, and a second insulating portion covering the top surface for voltage resistance. This segmentation allows each portion to be optimized for its specific function while working together to enable higher integration.

Inventive Principle:

Principle #1Segmentation

2Reliability

If lithographic cuts are used to prevent impurity diffusion, then electrical characteristics are maintained, but manufacturing complexity and cost increase

Engineering Contradiction:

Improveelectrical characteristicsVSAvoidmanufacturing complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent replaces the mechanical lithographic cutting process with a chemical/material-based solution. Instead of physically cutting the substrate to create isolation regions, insulating films are deposited and patterned to provide the same isolation function, eliminating the need for complex lithographic cut steps and associated alignment procedures.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Reliability

If larger spacing is provided between transistors to prevent impurity diffusion, then electrical characteristics are maintained, but integration degree decreases

Engineering Contradiction:

Improveelectrical characteristicsVSAvoidintegration degree

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent changes the material parameter of the insulating portion, specifically selecting materials with appropriate dielectric constants for different locations. The first insulating portion uses material with lower dielectric constant to effectively block impurity diffusion paths, while the second insulating portion uses material with higher dielectric constant to provide voltage resistance, enabling compact spacing without compromising electrical isolation.

Inventive Principle:

Principle #35Parameter changes

4Object-affected harmful factors

If first insulating portion with lower dielectric constant is used between gate electrodes, then impurity diffusion is reduced, but manufacturing precision requirements increase

Engineering Contradiction:

Improveimpurity diffusionVSAvoidinsulating portion placement

Core Design Contradiction:

Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The first insulating portion is formed as a preliminary structure before final transistor fabrication steps. By establishing the isolation barrier early in the manufacturing sequence, the patent ensures that impurity diffusion prevention is built into the structure from the outset, and subsequent processing steps can proceed without requiring ultra-precise alignment to maintain electrical isolation.

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS12457748B2Semiconductor device and method of manufacturing semiconductor device

Publication Date: 2025.10.28 KIOXIA CORP

AI summary

According to one embodiment, a semiconductor device includes a substrate, a first transistor, a second transistor, a first insulating portion, and a second insulating portion. The first transistor includes a first diffusion region and a second diffusion region, a first gate insulating film, and a first gate electrode. The second transistor includes a third diffusion region and a fourth diffusion region, a second gate insulating film, and a second gate electrode. The first insulating portion is positioned between the first gate electrode and the second gate electrode. The second insulating portion covers the first transistor, the second transistor, and the first insulating portion from a side opposite to the substrate. The first insulating portion and the second insulating portion are formed of different materials.