Semiconductor Transistor Layout With Selective Isolation Switching
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Solution Overview
Problem
The increasing resolution in semiconductor manufacturing processes leads to a decrease in the distance between gate electrodes, resulting in unintended short circuits and product defects, and poses challenges in electrical insulation, with existing methods like shallow trench isolation and dummy gates being inefficient and increasing chip size.
Innovation Solution
A semiconductor device layout is implemented with transistors arranged in a specific configuration on active areas of a substrate, where the second transistor can be selectively turned on or off to electrically insulate or drive the first and third transistors, allowing for efficient electrical insulation and improved driving force without increasing chip size or requiring additional processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the distance between gate electrodes is decreased to increase integration, then the storage capacity and integration increase, but unintended short circuits and product defects increase
Solution Approach 1:
A third transistor is introduced as an intermediary element between the first and second transistors. This third transistor functions as a controllable isolation device that can be turned on or off to prevent unintended short circuits between adjacent gate electrodes, thereby maintaining reliability while allowing high integration
2Reliability
If shallow trench isolation or dummy gate methods are used for insulation, then electrical insulation is achieved, but chip size increases and additional processes are required
Solution Approach 1:
The third transistor serves multiple functions: it provides electrical insulation between adjacent transistors when turned off, and can be turned on to enable signal transmission when needed. This multi-functional approach eliminates the need for separate isolation structures and processes, reducing chip size and manufacturing complexity
Solution Approach 2:
The isolation function is merged with the transistor structure itself. The third transistor is integrated into the circuit layout and shares the same fabrication process as other transistors, combining the isolation function with the active circuit elements rather than using separate isolation structures
Data Source
AI summary
A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.