Transistor Layout With Wider Channel Region to Reduce Kink Effect
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Solution Overview
Problem
Modern integrated chips face performance degradation due to leakage currents and the 'kink effect' caused by divots in shallow trench isolation structures, which affect the electrical behavior of adjacent devices.
Innovation Solution
A transistor device design with a substrate having a trench with dielectric materials, where the source and drain openings are narrower than the channel opening, creating a non-zero distance between the channel region and the isolation structure edges, reducing the impact of divots on the electric field and threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the channel opening is made wider to reduce the impact of divots on the electric field, then the kink effect is reduced, but the area occupied by the transistor device increases
Solution Approach 1:
The channel opening is segmented into different width regions: a first width in source/drain areas and a second (wider) width in the channel region. This segmentation allows the channel to be wider where needed to reduce divot impact while keeping source/drain regions compact, thus reducing the overall transistor footprint while maintaining performance stability.
Solution Approach 2:
The channel opening has non-uniform width with different characteristics in different locations: narrower near source/drain regions and wider in the middle channel region. This local quality variation optimizes the electric field distribution to minimize divot impact specifically in the channel region while maintaining compact device dimensions overall.
2Productivity
If the transistor devices are made smaller and more densely populated to improve chip functionality, then the speed increases and power consumption decreases, but the susceptibility to kink effect from isolation structure divots increases
Solution Approach 1:
By segmenting the channel opening width and creating a wider middle region, the design makes compact transistors less susceptible to divot effects, enabling high-density integration without proportionally increasing kink effect susceptibility.
Solution Approach 2:
The channel opening width parameter is changed from uniform to non-uniform distribution, with the wider middle section providing immunity to divot effects while maintaining small overall device dimensions for high-density integration.
Data Source
AI summary
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a substrate. An isolation structure is arranged within the substrate and surrounds an upper surface of the substrate. The isolation structure includes one or more surfaces defining one or more trenches that are laterally between the isolation structure and the substrate. A conductive gate is over the substrate and laterally between a source region and a drain region disposed within the upper surface of the substrate. The conductive gate extends into the one or more trenches and has an upper surface that continuously extends past opposing sides of the one or more trenches.