Semiconductor Transistor Leakage Current Control via Dynamic Power Supply
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Solution Overview
Problem
Existing semiconductor devices face challenges in reducing leakage current during operating states and suffer from increased power consumption and area expansion due to additional wiring required for controlling transistor power supply.
Innovation Solution
A semiconductor device design that includes a first transistor with a control electrode coupled to an input node and a conductive electrode coupled to an output node, and a second transistor with a control electrode coupled to the input node and a conductive electrode coupled to the output node, allowing for control of power supply voltage or back gate potential based on operating speed to adjust driving capability and reduce leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If additional power supply lines are added to control transistor power supply for reducing leakage current, then leakage current is reduced, but device area increases
Solution Approach 1:
The patent reuses existing power supply lines (first and second power supply lines) for dual purposes: normal transistor operation and leakage current control. By controlling the potential of these existing lines dynamically, the patent achieves leakage reduction without adding dedicated control power supply lines, thus avoiding area increase while maintaining energy loss reduction benefits
2Speed
If transistors are operated constantly in operating state, then operating speed is maintained, but leakage current increases
Solution Approach 1:
The patent dynamically adjusts transistor operating states based on operational needs. Transistors can switch between active operation (for high-speed performance) and low-leakage states (for energy conservation) by controlling the potential of power supply lines. This dynamic control allows the system to optimize between speed and energy loss depending on the operational context
3Loss of energy
If power supply voltage is controlled to reduce leakage current, then energy loss is reduced, but driving capability decreases
Solution Approach 1:
The patent implements dynamic control of power supply voltage and potential, allowing the system to adjust transistor driving capability in real-time based on operational requirements. When high driving capability is needed, full power supply voltage is applied; when energy conservation is prioritized, reduced voltage or cutoff is applied. This dynamic adjustment resolves the contradiction between power consumption and driving capability
Data Source
AI summary
A semiconductor device includes: a first transistor having a control electrode coupled to an input node receiving a signal synchronized with a clock, a first conductive electrode coupled to an output node, and a second conductive electrode; a second transistor having a control electrode coupled to the input node, a first conductive electrode coupled to the output node, and a second conductive electrode coupled to a power supply node; and a first switch element connected between the power supply node and the second conductive electrode of the second transistor and turned on and off based on a first control signal indicating a detection result of a frequency of the clock.