Compensation Transistor Leakage Current Control
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Solution Overview
Problem
High integration of semiconductor devices in display devices for driving light-emitting elements leads to degradation due to phenomena like leakage current, affecting element characteristics and reliability.
Innovation Solution
The display device incorporates a transistor structure with a specific doping pattern in the semiconductor layer, where the second region has a higher electrical resistance than the first region, reducing leakage current by varying impurity ion concentrations, and includes a dual transistor configuration to compensate for threshold voltage deviations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high integration of semiconductor devices is implemented to drive light-emitting elements, then device functionality and driving capability are improved, but leakage current increases causing degradation of element characteristics and reliability
Solution Approach 1:
The patent applies local quality by creating a dual-region semiconductor layer structure where the first region has a first doping concentration and the second region has a second doping concentration different from the first. This allows different portions of the same component to have different electrical properties, enabling the device to achieve both high driving capability through the first region and reduced leakage current through the second region, thus resolving the contradiction between productivity and reliability.
2Productivity
If high integration of semiconductor devices is implemented, then more pixels can be driven, but leakage current causes power consumption increase and panel staining
Solution Approach 1:
The patent uses local quality by doping different regions of the semiconductor layer with different concentrations. The first region with first doping concentration provides high conductivity for driving multiple pixels, while the second region with second doping concentration (lower than the first) acts as a barrier to leakage current. This spatial differentiation of doping concentrations allows the device to maintain high pixel driving capacity while minimizing power loss due to leakage and preventing panel staining.
3Productivity
If high integration of semiconductor devices is implemented, then display resolution is improved, but leakage current causes flicker and reliability degradation
Solution Approach 1:
The patent implements local quality by creating distinct doped regions within the semiconductor layer. The first region with higher doping concentration enables high integration for improved display resolution, while the second region with lower doping concentration serves as a leakage current barrier. This localized differentiation in doping concentration stabilizes the electrical characteristics, reducing flicker and maintaining operational reliability in high-resolution displays.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses leakage current, preventing power consumption increases, panel staining, and flicker, thereby enhancing the reliability and longevity of the display device.
Implementation Method 1
electrical resistance of the second region is greater than electrical resistance of the first region
Implementation Method 2
a concentration of the impurity ions doped in the first region is greater than a concentration of the impurity ions doped in the second region
Data Source
AI summary
A display device includes scan lines for scan signals, data lines for data voltages, and pixels connected to the scan and data lines, where each of the pixels includes a first transistor configured to control a driving current which flows from a first electrode to a second electrode according to a voltage applied to a gate electrode, a light-emitting element connected to the second electrode and configured to emit light according to the driving current, and a third transistor electrically connected between the gate electrode and the second electrode, the third transistor includes an active layer including a first region connected to the second electrode of the first transistor, a second region connected to the gate electrode of the first transistor, and a channel region between the first region and the second region, and electrical resistance of the second region is greater than electrical resistance of the first region.