Transistor Light-Emitting Device With Segmented Transport Layers
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Solution Overview
Problem
Conventional light-emitting devices with integrated transistor structures lack effective electron and hole injection due to the absence of transporting layers, leading to reduced lifespan and manufacturing complexity.
Innovation Solution
A light-emitting device with a transistor structure that includes a light-emitting layer, electron-transporting layer, and hole-transporting layer formed between the source and drain electrodes, allowing for controlled voltage adjustment to enhance electron and hole mobility and selectively set the light-emitting region, thereby increasing device efficiency and lifespan.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the light-emitting portion and transistor driving portion are formed independently, then the device size increases and manufacturing becomes difficult, but integrating them creates a need for effective electron and hole injection layers
Solution Approach 1:
The patent divides the channel layer into functionally distinct segments: a hole-transporting layer adjacent to the source electrode and an electron-transporting layer adjacent to the drain electrode. This segmentation allows each layer to specialize in transporting its respective charge carrier, resolving the injection efficiency problem while maintaining integrated structure
Solution Approach 2:
The patent applies local quality by giving different regions of the channel layer different properties: the hole-transporting layer has high hole mobility and the electron-transporting layer has high electron mobility. This localized functional differentiation enables effective charge injection at each electrode interface
2Device complexity
If no electron-transporting layer or hole-transporting layer is provided, then the device structure is simpler, but electron and hole injection becomes ineffective
Solution Approach 1:
The patent introduces electron-transporting and hole-transporting layers as intermediary structures between the electrodes and the light-emitting layer. These intermediary layers facilitate efficient charge carrier transport and injection, solving the manufacturing effectiveness problem without excessive complexity
3Ease of operation
If the light-emitting region cannot be selectively controlled, then the device operation is simpler, but device lifespan decreases due to overcurrent
Solution Approach 1:
The patent implements dynamic control of the light-emitting region by adjusting the gate voltage magnitude. This dynamic capability allows the active region to be shifted between the hole-transporting and electron-transporting layers, enabling current distribution control that extends device lifespan while maintaining operational flexibility
4Ease of manufacture
If electrons and holes cannot be effectively injected, then the manufacturing process is simpler, but light-emitting efficiency and purity decrease
Solution Approach 1:
The patent optimizes light-emitting efficiency by controlling the magnitude of gate voltage applied to the transistor. This parameter change enables selective activation of electron or hole injection pathways, achieving high light-emitting efficiency and purity while maintaining a manageable manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-efficiency and high-purity light-emitting properties, simplifies the manufacturing process, and extends the device's lifespan by allowing for precise control of the light-emitting region through voltage adjustment, reducing overcurrent and quenching phenomena.
Implementation Method 1
an electroluminescent device is a device using a phenomenon by which light is emitted when an electric field is applied to a predetermined material, in which electrons and holes are injected to a light-emitting layer, form excitons and are then recombined, thus emitting light
Implementation Method 2
it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region, through the control of the magnitude of voltage that is applied to the gate electrode
Data Source
AI summary
Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.