Transistor with Interlayer Oxide Reservoir for Oxygen Diffusion
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Solution Overview
Problem
The challenge in manufacturing metal oxide transistors is maintaining the oxygen concentration in semiconductor layers during processes like vapor deposition and etching, which affects the driving capability and reliability due to oxygen loss, and the materials' photosensitivity impacts electrical properties.
Innovation Solution
Incorporating an oxide layer with a higher oxygen concentration between the semiconductor layers to form repair interfaces through oxygen diffusion, enhancing the oxygen levels and improving the transistor's performance, and using metal gates to mitigate photosensitivity effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If vapor deposition and etching processes are used to manufacture metal oxide transistor, then manufacturing efficiency is improved, but oxygen concentration in semiconductor layer decreases
Solution Approach 1:
The patent applies preliminary action by forming an oxide layer between the semiconductor layer and gate electrode before completing the transistor structure. This oxide layer serves as an oxygen reservoir that can replenish oxygen to the semiconductor layer during subsequent manufacturing processes like vapor deposition and etching, preventing oxygen loss and maintaining semiconductor performance throughout the manufacturing sequence.
2Ease of manufacture
If conventional manufacturing processes are applied, then device fabrication is achieved, but driving capability of transistor deteriorates due to oxygen loss
Solution Approach 1:
The patent introduces an intermediary oxide layer that acts as a mediator between the semiconductor layer and gate electrode. This oxide layer protects the semiconductor layer from oxygen loss during conventional manufacturing processes by serving as an oxygen source, thereby maintaining the semiconductor layer's oxygen concentration and ensuring transistor driving capability is not deteriorated during fabrication.
3Reliability
If metal oxide semiconductor material is used, then carrier mobility and operating stability are improved, but photosensitivity affects electrical properties and reliability
Solution Approach 1:
The oxide layer serves as an intermediary protective barrier between the metal oxide semiconductor layer and the gate electrode. This intermediary layer mitigates the harmful photosensitivity effect by preventing direct interaction between light and the semiconductor material during device operation, thereby preserving electrical properties and reliability while maintaining the benefits of high carrier mobility and operating stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the driving capability and current on-off ratio of the transistor while maintaining electrical properties and reliability by replenishing oxygen in semiconductor layers and reducing current leakage, outperforming single-gate single-channel transistors.
Implementation Method 1
the oxide layer is located between the two semiconductor layers for repairing the semiconductor layers, improving the driving capability of the transistor
Data Source
AI summary
A transistor and a manufacturing method thereof are provided. The transistor includes a first gate, a second gate disposed on one side of the first gate, a first semiconductor layer, a second semiconductor layer, an oxide layer, a first insulation layer, a second insulation layer, a source, and a drain. The first semiconductor layer is disposed between the first and second gates; the second semiconductor layer is disposed between the first semiconductor layer and the second gate. The oxide layer is disposed between the first semiconductor layer and the second semiconductor layer. The first insulation layer is disposed between the first gate and the first semiconductor layer; the second insulation layer is disposed between the second gate and the second semiconductor layer. The source and the drain are disposed between the first insulation layer and the second insulation layer and respectively disposed on opposite sides of the oxide layer.