Transistor Electroless Plating via Silane Base Film
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Solution Overview
Problem
Electroless plating on non-conductive substrates like resin materials and glass faces challenges due to weak adhesion of the plating film, leading to issues such as peeling and swelling, and the development of the resist layer can cause the base film to dissolve, resulting in inaccurate wiring patterns.
Innovation Solution
A method involving the application of a silane coupling agent to form a base film on the substrate, followed by a protection layer using an organic silicon compound, allowing for precise patterning and preventing the base film from dissolving during development, enabling high-accuracy electroless plating for wiring patterns and transistor manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If electroless plating is applied on poor plating materials such as resin or glass, then plating can be formed on non-conductive substrates, but the plating film exhibits weak adhesion and causes peeling and swelling
Solution Approach 1:
The patent introduces a base film as an intermediary layer between the poor plating material (resin or glass) and the plating film. This base film serves as a mediator that provides both adhesion to the substrate and suitable properties for plating film formation, thereby resolving the adhesion problem while maintaining the ability to plate non-conductive substrates
Solution Approach 2:
The patent creates a composite structure consisting of the base film and the plating film. The base film is formed as a composite material that combines the benefits of adhesion to the resin/glass substrate with the ability to support strong plating film formation, thus achieving both versatility and strength
2Manufacturing precision
If the resist layer is developed to form wiring patterns, then the desired pattern is revealed, but the developer dissolves the base film causing the wiring pattern to become wider than the design pattern
Solution Approach 1:
The patent introduces a protection layer as an intermediary between the base film and the developer. This protection layer prevents the developer from directly contacting and dissolving the base film, while still allowing the resist pattern to be developed accurately, thus maintaining both pattern precision and base film stability
Solution Approach 2:
The patent applies the protection layer in advance before the development process. This preliminary action of coating the protection layer on the base film prevents the base film dissolution issue from occurring during subsequent development, ensuring pattern accuracy is maintained
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures high size accuracy in forming desired wiring patterns and enables the production of high-performance transistors by preventing base film dissolution and maintaining the integrity of the plating film, even on substrates with low heat resistance.
Implementation Method 1
applying a liquid body including a first formation material on at least part of a substrate to form a plating base film
Implementation Method 2
applying a liquid body including a second formation material on at least part of a surface of the plating base film to form a protection layer of the plating base film
Implementation Method 3
causing the exposed photoresist layer to come into contact with a developer to remove the photoresist layer and the protection layer until the plating base film is uncovered
Implementation Method 4
after depositing a metal as a catalyst for electroless plating on a surface of the uncovered plating base film, causing an electroless plating solution to come into contact with the surface of the plating base film to perform electroless plating
Data Source
AI summary
A transistor manufacturing method includes forming a source electrode and a drain electrode on a substrate, forming a layer including an insulator layer to cover the source electrode and the drain electrode, and forming a gate electrode on the layer including the insulator layer, wherein the forming the gate electrode includes forming a plating base film, forming a protection layer of the plating base film, forming a photoresist layer on the protection layer to expose the photoresist layer with desired patterning light, causing the exposed photoresist layer to come into contact with a developer to remove the photoresist layer and the protection layer until the plating base film is uncovered corresponding to the patterning light, and after depositing a metal on the uncovered plating base film, causing an electroless plating solution to come into contact with the plating base film to perform electroless plating.