Transistor PUF Circuit Using Threshold Voltage Differences

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Solution Overview

Problem

Integrated circuits fabricated using semiconductor processes exhibit unique physical differences due to manufacturing variations and misalignment, leading to variations in transistor threshold voltages, which existing physical unclonable functions (PUFs) are sensitive to environmental changes, making them unreliable for differentiation.

Innovation Solution

The implementation of PUF circuitry that includes a difference generator circuit with PMOS or NMOS transistors, a self-timed timing circuit, and a sense amplifier, which utilize the unique threshold voltages of transistors to generate stable responses to challenges, differentiating integrated circuits without significant dependence on environmental conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing physical unclonable functions are used to differentiate integrated circuits, then physical uniqueness can be utilized, but the responses are sensitive to environmental changes making them unreliable

Engineering Contradiction:
Improvereliability of PUF responsesVSAvoidsensitivity to environmental changes
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the physical parameter being measured from environmental-sensitive properties to transistor threshold voltage, which is determined by manufacturing variations. By measuring threshold voltage differences between transistors rather than environmental responses, the system achieves reliable differentiation that is insensitive to temperature, humidity, and other environmental factors.

Inventive Principle:
Principle #35Parameter changes

2Object-affected harmful factors

If transistor threshold voltage variations are used for PUF, then environmental sensitivity is reduced, but manufacturing precision variations must be exploited

Engineering Contradiction:
Improveenvironmental sensitivityVSAvoidtransistor parameter consistency
Core Design Contradiction:
Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The patent converts the harmful effect of manufacturing variations (which cause inconsistency) into a beneficial feature by exploiting these very variations to create unique threshold voltages in each transistor. The uncontrollable random physical processes that cause manufacturing imprecision become the source of physical unclonability, allowing each integrated circuit to have a unique fingerprint based on its transistor characteristics.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Data Source

PatentUS11388014B2Transistor-based physically unclonable function
Publication Date: 2022.07.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11388014B2 patent drawing
  • US11388014B2 patent drawing
  • US11388014B2 patent drawing

AI summary

An integrated circuit is fabricated using a semiconductor fabrication process. One or more uncontrollable random physical processes in the semiconductor fabrication process can cause small differences between the integrated circuit and other similarly designed integrated circuit. These small differences can cause transistors of the integrated circuit to have different threshold voltages. The integrated circuit can use these different threshold voltages to quantify its physical uniqueness to differentiate itself from other integrated circuits similarly designed and fabricated by the semiconductor fabrication process.