Integrated Transistor-Resistor Structure for High Sheet Resistance
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Solution Overview
Problem
The challenge in semiconductor device manufacturing lies in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly in ensuring sufficient sheet resistance in smaller resistors formed by conventional processes.
Innovation Solution
A semiconductor device structure is designed with a transistor and resistor integrated in series, where the gate electrode and resistor electrode are formed in a semiconductor substrate using a single process step, eliminating the need for additional masks or process steps, and featuring a dielectric layer and interconnect structure to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional process flow is used to form smaller resistors, then device scaling is achieved, but sheet resistance becomes insufficient
Solution Approach 1:
The patent merges the formation of the resistor electrode with the transistor gate electrode into a single process step. By forming both electrodes simultaneously from the same conductive material layer, the resistor benefits from the same high-quality conductive properties as the transistor gate, ensuring sufficient sheet resistance even as resistor dimensions are scaled down.
2Reliability
If additional masks or process steps are used to form high sheet resistance resistors, then sheet resistance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent combines multiple functions into a single process step: forming the transistor gate electrode and the resistor electrode simultaneously using the same mask and deposition process. This eliminates the need for additional masks or process steps that would otherwise be required to achieve high sheet resistance in the resistor, thereby maintaining manufacturing simplicity while ensuring adequate sheet resistance.
Solution Approach 2:
The conductive material layer serves multiple functions: it forms both the transistor gate electrode and the resistor electrode. This multi-functional approach allows the same process parameters and materials to be optimized for both components, reducing the need for separate process optimization and additional manufacturing steps.
Data Source
AI summary
The present application discloses a semiconductor device structure and a method for fabricating the semiconductor device structure. The semiconductor device structure includes a substrate; a transistor and a resistor disposed in the substrate; a plurality of isolation structures disposed in the substrate; a dielectric layer disposed over the substrate; and an interconnect structure disposed over and electrically connected to the transistor and the resistor. The transistor is disposed between a pair of the isolation structures, and the resistor is disposed between another pair of the isolation structures.