Light Emitting Device Transistor Silicide Diffusion Control
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Solution Overview
Problem
Miniaturization of transistors in light emitting devices leads to increased off-leakage current due to junction leakage, affecting image quality by causing degradation in contrast.
Innovation Solution
A light emitting device design where transistors have silicides with different diffusion coefficients for their diffusion regions, with a smaller diffusion coefficient silicide in regions connected to the light emitting element to reduce off-leakage current and maintain high driving capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If transistor size is miniaturized to increase pixel resolution, then pixel resolution is improved, but off-leakage current increases due to junction leakage
Solution Approach 1:
The patent applies different silicide materials with different metal diffusion coefficients to different transistor regions. Specifically, transistors connected to light emitting elements use silicides with lower metal diffusion coefficients to suppress junction leakage, while other transistors use silicides with higher diffusion coefficients to maintain good electrical contact. This local differentiation resolves the contradiction by tailoring material properties to specific functional requirements.
Solution Approach 2:
The patent changes the metal diffusion coefficient parameter of silicide materials based on transistor function. By selecting metals with appropriate diffusion coefficients (lower for transistors connected to light emitting elements, higher for others), the patent optimizes both leakage suppression and electrical contact quality, thereby resolving the contradiction between miniaturization and leakage current.
2Power
If silicide with larger diffusion coefficient is used to maintain driving capability, then electrical contact is improved, but off-leakage current increases
Solution Approach 1:
The patent implements local quality differentiation by assigning silicides with larger metal diffusion coefficients to transistors that require high driving capability but are not connected to light emitting elements, while using silicides with smaller diffusion coefficients for transistors connected to light emitting elements where leakage suppression is critical. This resolves the contradiction by optimizing material properties for specific functional contexts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses off-leakage current and maintains high response speed, preventing image quality degradation and ensuring finer pixel resolution.
Implementation Method 1
a diffusion coefficient of a metal contained in the first silicide to silicon is smaller than a diffusion coefficient of a metal contained in the second silicide to silicon
Data Source
AI summary
A light emitting device in which a pixel including a light emitting element and transistors configured to operate the light emitting element are arranged is provided. The transistors include a first transistor including one of a source region and a drain region connected to the light emitting element, and a second transistor including a source region and a drain region not connected to the light emitting element. A first silicide is arranged in a first diffusion region functioning as one of the source region and the drain region of the first transistor, a second silicide is arranged in a second diffusion region functioning as one of the source region and the drain region of the second transistor, and a diffusion coefficient of a metal contained in the first silicide is smaller than a diffusion coefficient of a metal contained in the second silicide.