Transistor Simulation Using Poole-Frenkel Trap Model

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Solution Overview

Problem

Conventional transistor equivalent circuit models fail to accurately match calculation and measurement results for transient response characteristics under various voltage conditions due to a constant time constant in the trap equivalent circuit.

Innovation Solution

A transistor equivalent circuit model that modifies the trap level based on electric field intensity using the Poole-Frenkel effect, incorporating a trap equivalent circuit with voltage and temperature-dependent parameters to accurately represent the time constant of the trap.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a conventional trap equivalent circuit with constant time constant is used, then the circuit model is simple, but the calculation result does not match the measurement result in simulation of transient response characteristics under a plurality of voltage conditions

Engineering Contradiction:
Improvematching accuracy between calculation and measurement resultsVSAvoidcomplexity of trap equivalent circuit
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies the dynamics principle by making the trap time constant variable rather than constant. The time constant is modified to depend on voltage and temperature conditions, allowing the trap equivalent circuit to dynamically adapt to different operating states. This enables the calculation results to match measurement results across multiple voltage conditions while maintaining reasonable circuit complexity through the use of standard circuit elements with voltage/temperature-dependent parameters.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent applies parameter changes by modifying the time constant parameter of the trap equivalent circuit to be voltage and temperature dependent. Specifically, the time constant is expressed as a function of voltage (V) and temperature (T), allowing the trap characteristics to change with operating conditions. This parameter modification enables accurate simulation of transient response characteristics across different voltage conditions while keeping the circuit model structure relatively simple.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If the trap time constant is made variable to match measurement results under multiple voltage conditions, then the simulation accuracy improves, but the circuit model complexity increases

Engineering Contradiction:
Improvesimulation accuracy of transient response characteristicsVSAvoidcomplexity of trap equivalent circuit model
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent modifies the time constant parameter to be voltage and temperature dependent, expressing it as a function of operating conditions. This allows the trap equivalent circuit to accurately represent physical trap behavior under varying conditions, improving simulation accuracy without requiring fundamentally complex circuit structures.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent substitutes complex physical trap modeling with an equivalent circuit approach that uses standard circuit elements (resistors, capacitors) with voltage/temperature-dependent parameters. This substitution maintains simulation accuracy while avoiding the complexity of detailed physical trap modeling, effectively replacing complex physics-based models with more manageable circuit-based representations.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for a closer match between calculation and measurement results for transient response characteristics under multiple voltage conditions, enhancing the accuracy of transistor simulations.

Implementation Method 1

the trap equivalent circuit corresponding to a physical model of Poole-Frenkel effect

Methodology Applied
Scientific EffectPoole-Frenkel effect: Pool-Frenkel Effect

Data Source

PatentUS20240037315A1Transistor characteristic simulation device, transistor characteristic simulation method, and non-transitory computer readable medium storing transistor characteristic simulation program
Publication Date: 2024.02.01 MITSUBISHI ELECTRIC CORP
  • US20240037315A1 patent drawing
  • US20240037315A1 patent drawing
  • US20240037315A1 patent drawing

AI summary

A transistor characteristics simulation device uses a transistor equivalent circuit model, in which the transistor equivalent circuit model includes a trap equivalent circuit for modifying a level of a trap of a transistor by an electric field intensity, the trap equivalent circuit corresponding to a physical model of Poole-Frenkel effect.