Compound Semiconductor Transistor with Source Sense Lead

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Solution Overview

Problem

The development of electronic components for power applications, particularly those using compound semiconductor devices, faces challenges in managing high voltages and fast switching times, which complicates package design and increases energy loss due to parasitic source inductance.

Innovation Solution

The electronic component incorporates a compound semiconductor transistor device with a source sense functionality, where a separate lead provides a reference voltage to exclude parasitic source inductance from driver circuitry, and is packaged with a housing that includes epoxy resin for protection and surface mountability, enabling efficient high-voltage and high-frequency operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If compound semiconductor devices are used to carry large currents and support high voltages, then power handling capability is improved, but parasitic source inductance increases causing energy loss

Engineering Contradiction:
Improvepower handling capabilityVSAvoidenergy loss due to parasitic source inductance
Core Design Contradiction:
PowerVSLoss of energy

Solution Approach 1:

The patent segments the electrical connection path by providing a separate source sense lead (third lead) that is spaced from the die pad, distinct from the main current path leads. This segmentation allows the source sensing function to be electrically separated from the high-current path, reducing the impact of parasitic inductance on the sensing accuracy and enabling better control of the power device.

Inventive Principle:
Principle #1Segmentation

2Speed

If fast switching times are implemented, then switching speed is improved, but parasitic source inductance causes additional challenges and energy loss

Engineering Contradiction:
Improveswitching speedVSAvoidenergy loss due to parasitic source inductance
Core Design Contradiction:
SpeedVSLoss of energy

Solution Approach 1:

The patent introduces an intermediary source sense lead that provides a dedicated sensing path for the source voltage. This intermediary element allows the control circuitry to accurately sense the source voltage without being affected by the parasitic inductance in the main current path, enabling fast switching operations with minimal energy loss.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Area of stationary object

If leads are placed close to the die pad, then device footprint is reduced, but parasitic source inductance increases

Engineering Contradiction:
Improvedevice footprintVSAvoidenergy loss due to parasitic source inductance
Core Design Contradiction:
Area of stationary objectVSLoss of energy

Solution Approach 1:

The patent applies local quality by providing different spatial arrangements for different leads. The source sense lead (third lead) is spaced at a distance from the die pad, creating a localized region with reduced parasitic inductance for sensing purposes, while other leads may be positioned differently to optimize their respective functions. This localized optimization allows the device to maintain compact footprint while minimizing parasitic effects in critical areas.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS9899481B2Electronic component and switch circuit
Publication Date: 2018.02.20 INFINEON TECH AUSTRIA AG
  • US9899481B2 patent drawing
  • US9899481B2 patent drawing
  • US9899481B2 patent drawing

AI summary

In an embodiment, an electronic component includes a compound semiconductor transistor device having a first current electrode, a second current electrode and a control electrode, a die pad, a first lead, a second lead and a third lead. The first lead, the second lead and the third lead are spaced at a distance from the die pad. The control electrode is coupled to the first lead, the first current electrode is coupled to the die pad and the second current electrode is coupled to the second lead. The third lead is coupled to the compound semiconductor transistor device and provides a source sensing functionality.