Transistor Split Buried Layer Breakdown Voltage
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Solution Overview
Problem
High-voltage transistor devices face challenges in increasing their breakdown voltage, which is essential for efficient operation in integrated circuit devices.
Innovation Solution
A transistor structure is designed with a split buried layer and a second buried layer, both of the same conductive type, forming a stepped structure to prevent electrical field concentration and enhance breakdown voltage, while maintaining compatibility with existing manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single buried layer structure is used, then the manufacturing process is simple, but the breakdown voltage is limited
Solution Approach 1:
The buried layer is divided into multiple segments (first buried layer and second buried layer) with different conductive types arranged in alternating fashion. This segmentation creates multiple depletion regions that extend into the substrate, effectively increasing the breakdown voltage while maintaining a manageable structural complexity through systematic alternation of conductive types.
Solution Approach 2:
Different regions of the buried layer are assigned different conductive types (first conductive type and second conductive type) to create localized electrical field distribution. This local quality variation optimizes the electrical characteristics at different positions, enhancing overall breakdown voltage performance.
2Reliability
If the buried layer structure is simplified, then manufacturing is easier, but electrical field concentration occurs reducing breakdown voltage
Solution Approach 1:
The buried layer is segmented into alternating regions of first and second conductive types, creating a periodic structure that prevents electrical field concentration. This segmentation approach maintains manufacturing feasibility through standardized fabrication processes while achieving superior electrical performance.
Solution Approach 2:
The alternating conductive types in the segmented buried layer create equipotential regions that distribute the electrical field uniformly across the structure. This prevents field concentration at specific points, enhancing breakdown voltage without requiring complex manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure effectively increases the breakdown voltage of the transistor and prevents electrical field concentration, allowing for improved operational characteristics without significant changes to existing manufacturing processes.
Implementation Method 1
The split buried layer and the second buried layer have a first conductive type... form a stepped structure at a position in which the second buried layer and the split buried layer are connected... prevent electrical field concentration
Data Source
AI summary
A transistor structure including a substrate, a transistor device, a split buried layer, and a second buried layer is provided. The substrate has a device region. The transistor device is located in the device region. The split buried layer is located under the transistor device in the substrate and includes first buried layers separated from each other. The second buried layer is located under the split buried layer in the substrate and connects the first buried layers. The second buried layer and the split buried layer have a first conductive type. The transistor structure may have a higher breakdown voltage.