3D Transistor Stress Layer Modulation
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Solution Overview
Problem
Conventional III-nitride semiconductor transistors with planar structures are limited by their polarization properties, which restrict the modulation of transistor characteristics, particularly in high-power, high-frequency applications where efficient voltage blocking and current carrying capabilities are essential.
Innovation Solution
A new transistor structure is introduced with a dielectric stress layer in a three-dimensional configuration outside the gate recess region, featuring trenches between the source and drain electrodes that create ridges traversing the gate recess region, and a dielectric layer with compressive or tensile stress to modulate the transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a planar structure is used for III-nitride semiconductor transistors, then the device structure is simple and easy to manufacture, but the transistor characteristics cannot be effectively modulated due to polarization properties
Solution Approach 1:
The patent transitions from a conventional planar (2D) gate structure to a three-dimensional gate structure that extends laterally beyond the channel region. This dimensional change enables the gate to interact with and modulate the 2DEG in adjacent channels, providing enhanced control over transistor characteristics while maintaining compatibility with standard III-nitride fabrication processes
2Adaptability or versatility
If the gate structure is extended laterally beyond the channel region, then the modulation of transistor characteristics is improved, but the device complexity increases
Solution Approach 1:
The extended gate structure serves multiple functions: it acts as the primary gate for the main channel while simultaneously functioning as a control electrode for adjacent channels through capacitive coupling. This multi-functionality enables enhanced modulation capability without requiring additional separate control structures, thereby limiting the increase in device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure enhances the carrier density and threshold voltage modulation, improving the performance of III-Nitride semiconductor devices for high-power and high-frequency applications by reducing capacitance and increasing efficiency.
Implementation Method 1
a dielectric layer, wherein the dielectric layer fills at least a portion of the trenches and covers the barrier layer outside the gate recess region, and wherein a thickness of the dielectric layer in the gate recess region is less than in other areas; and a gate electrode disposed in the gate recess region. In certain embodiments, the dielectric layer has compressive or tensile stress.
Data Source
AI summary
A new transistor structure is disclosed. This new structure has a dielectric stress layer in a three-dimensional structure outside of the gate region for modulation or the characteristics of the transistor. Additionally, trenches are created in the region between the source electrode and the drain electrode in such a manner so as to create ridges that traverse the gate region.