Transistor Temperature Sensing via Overcurrent Detection Terminal
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Solution Overview
Problem
Existing systems for determining the internal temperature of transistors in high voltage or high power applications require multiple terminals and external devices, which can be cumbersome and inefficient.
Innovation Solution
Utilizing a terminal of an integrated circuit that is also used for overcurrent detection to measure voltage during the on phase of a transistor, converting this voltage to a digital value to determine the internal temperature, thereby reducing the need for additional terminals and external devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple terminals and external devices are used to determine internal temperature of transistors, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The patent makes the existing terminal (used for overcurrent detection) serve dual purposes: it continues to detect overcurrent conditions while simultaneously being used to measure voltage for determining internal transistor temperature. This eliminates the need for separate dedicated temperature sensing terminals and external measurement devices, thereby reducing device complexity while maintaining measurement capability.
Solution Approach 2:
The system uses its own existing infrastructure (terminals and voltage measurement capabilities already present for overcurrent detection) to also perform temperature determination. The integrated circuit's existing voltage measurement functions are leveraged to measure the voltage at the terminal during transistor on-phase, which then provides temperature information without requiring additional external measurement equipment.
2Measurement precision
If additional external devices are added for temperature monitoring, then measurement precision is improved, but ease of operation deteriorates
Solution Approach 1:
The existing terminal is designed to perform multiple functions: overcurrent detection and temperature monitoring. By measuring the voltage at this terminal during the transistor's on-phase, the system obtains temperature information using the same infrastructure already present for protection functions, eliminating the need for separate external temperature sensors and simplifying system operation.
Solution Approach 2:
The patent combines temperature monitoring functionality with the existing overcurrent detection system. The voltage measurement capability that already exists for protection purposes is merged with temperature sensing requirements, allowing both functions to be achieved through a unified approach that reduces operational complexity.
Data Source
AI summary
The internal temperate of a transistor is determined by detecting a voltage though a terminal of an integrated circuit that is also used by an overcurrent detection circuit of the integrated circuit for detecting an overcurrent condition of the system. The overcurrent detection circuit is coupled to a current electrode of the transistor through the terminal of the integrated circuit. A determination of internal temperature is based on a voltage measurement taken from the terminal during an on phase of the transistor. The voltage measurement is converted to a digital value and is used to determine an internal temperature of the transistor.