Integrated Transistor Temperature Sensing Without Added Sensor Structures
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High-temperature stresses in transistor arrays due to FET self-heating cause damage, and on-chip temperature sensors increase device size and complexity, leading to higher costs and lower yield.
Innovation Solution
Integrate temperature sensing circuitry with connections to polysilicon members or oppositely doped substrate portions within the transistor structure to detect temperature-dependent characteristics without adding processing steps, utilizing existing manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If on-chip temperature sensors are integrated with transistors to prevent high-temperature stress, then temperature monitoring capability is improved, but device size and complexity increase
Solution Approach 1:
The patent merges the temperature sensing function with existing transistor structures by utilizing the polysilicon gate or oppositely doped substrate portions that are already part of the transistor fabrication process. This integration allows temperature monitoring without adding separate sensor components, thereby improving reliability while avoiding increased device complexity.
Solution Approach 2:
The invention makes existing transistor components serve dual purposes: the polysilicon member or junction diode functions both as part of the transistor operation and as a temperature sensor. This multi-functionality enables temperature monitoring capability while maintaining the original device structure and complexity.
2Reliability
If on-chip temperature sensors are integrated with transistors, then temperature monitoring capability is improved, but manufacturing cost increases
Solution Approach 1:
The patent combines temperature sensing with existing transistor structures, eliminating the need for separate sensor fabrication processes. By using the polysilicon gate or junction diode already formed during standard transistor manufacturing, the solution improves temperature monitoring capability without adding manufacturing steps or costs.
Solution Approach 2:
The existing transistor components (polysilicon member or junction diode) serve themselves as temperature sensors, requiring no additional components or processes. This self-service approach enables temperature monitoring while maintaining manufacturing simplicity and cost-effectiveness.
3Reliability
If on-chip temperature sensors are integrated with transistors, then temperature monitoring capability is improved, but device yield decreases
Solution Approach 1:
The patent integrates temperature sensing into the existing transistor fabrication process by utilizing structures (polysilicon gate or junction diode) that are already formed during standard manufacturing. This merging approach improves temperature monitoring capability without adding process steps that could reduce device yield.
Solution Approach 2:
The invention leverages existing transistor components to provide temperature sensing functionality, requiring no additional manufacturing processes. This self-service mechanism improves monitoring capability while maintaining manufacturing simplicity and preserving device yield.
4Measurement precision
If polysilicon member or junction diode is used for temperature sensing, then sensitivity and accuracy are improved, but device complexity would increase without integration
Solution Approach 1:
The patent merges the temperature sensing function with existing transistor structures (polysilicon gate or junction diode) that inherently provide good temperature sensing characteristics. This integration achieves high measurement precision while avoiding additional device complexity by using already-present structures.
Solution Approach 2:
The invention makes existing components (polysilicon member or junction diode) serve dual purposes: maintaining their original transistor functions while simultaneously providing accurate temperature sensing. This multi-functionality achieves high measurement precision without increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effective temperature monitoring is achieved with improved sensitivity and accuracy, reducing complexity and cost while maintaining yield, suitable for high-power transistors and arrays.
Implementation Method 1
the circuitry comprises two connections to the polysilicon member and is configured to detect a temperature-dependent characteristic of the polysilicon member
Implementation Method 2
the circuitry includes connections to the oppositely doped substrate portions and is configured to detect a temperature-dependent characteristic of the junction diode
Data Source
AI summary
The present disclosure introduces an IC apparatus that includes a transistor and circuitry, as well as method of manufacture of such IC apparatus. The transistor is constructed in layers formed in or over a semiconductor substrate and includes a polysilicon member proximate a feature of the transistor. The circuitry includes two connections to the polysilicon member and is configured to detect a temperature-dependent characteristic of the polysilicon member. The transistor may also or instead include oppositely doped portions of the semiconductor substrate, which form a junction diode. The circuitry may also or instead include connections to the oppositely doped substrate portions and may be configured to detect a temperature-dependent characteristic of the junction diode.