Multi-Channel Transistor Layout With Through Vias for Short-Channel Control
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing integration density and effectively suppressing short channel effects in multi-channel transistors, which limits their performance and scalability.
Innovation Solution
The semiconductor device incorporates a substrate with active patterns and gate electrodes arranged in specific horizontal directions, featuring through vias and active cuts to improve integration density by placing a lower wiring layer below the substrate and connecting it with through vias between active cuts, allowing for efficient current control and reduced short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a multi-channel transistor with three-dimensional channel structure is employed to increase integration density, then the integration density is improved, but the short channel effect becomes more pronounced
Solution Approach 1:
The patent transitions from planar gate structures to three-dimensional gate structures (wrap-around gates, multi-layer gates) that extend vertically and laterally around the channel. This dimensional change allows the gate to control the channel from multiple directions, effectively suppressing short channel effects while maintaining high integration density through compact vertical stacking.
Solution Approach 2:
The patent implements nested gate structures where inner gates are positioned within or around outer gates, creating concentric or layered configurations. This nesting allows multiple gate electrodes to control different portions of the channel simultaneously, providing enhanced electrostatic control and suppressing short channel effects without increasing lateral footprint.
2Reliability
If the gate length of multi-channel transistor is increased to suppress short channel effect, then the short channel effect is suppressed, but the current control capability is reduced
Solution Approach 1:
The patent applies different gate lengths to different channels or different portions of the channel structure. Some channels have longer gates for enhanced control, while others maintain shorter gates for higher current drive. This local differentiation allows simultaneous optimization of short channel effect suppression and current control capability across different regions of the device.
Solution Approach 2:
The gate structure is divided into multiple segmented gates or gate regions that can independently control different channel segments. This segmentation allows each gate portion to be optimized for its specific function - some segments provide strong electrostatic control for SCE suppression, while others maintain shorter lengths for current control, achieving both objectives simultaneously.
3Ease of manufacture
If conventional wiring layer arrangement is used with all wiring layers above substrate, then manufacturing is simplified, but integration density is limited
Solution Approach 1:
The patent utilizes the vertical dimension by positioning wiring layers on both the top and bottom surfaces of the substrate, effectively transforming a two-dimensional wiring layout into a three-dimensional configuration. This allows power rails and ground rails to be distributed across multiple vertical levels, doubling the available wiring real estate and significantly improving integration density without complicating the manufacturing process.
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes first through third active patterns extending in and spaced apart from each other along a first direction on a first surface of a substrate; a first gate electrode extending in a second direction on the first active pattern; a first active cut between the first and second active patterns, wherein the first active cut extends in the second direction, and the first active cut is spaced apart from the first gate electrode in the first direction; a second active cut between the second and third active patterns, wherein the second active cut extends in the second direction, and the second active cut is spaced apart from the first active cut in the first direction; and a first through via extending vertically through the second active pattern between the first and second active cuts, and into the substrate.