Semiconductor Transistor Trench Isolation for Leak Current Reduction
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Solution Overview
Problem
Semiconductor devices face challenges in reducing footprint and increasing packaging density due to increased leak current between transistors, which is exacerbated by the limitations of manufacturing processes and the proximity of adjacent transistors.
Innovation Solution
The introduction of a trench and an impurity region containing carbon in the semiconductor substrate between transistors to alter the threshold voltage and reduce leak current, while maintaining junction withstand voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the distance between adjacent transistors is decreased to reduce footprint and increase packaging density, then the device size is reduced and packaging density is increased, but the leak current between transistors increases
Solution Approach 1:
The semiconductor substrate is segmented into multiple regions including first regions for transistors, second regions for impurity introduction, and third regions for trenches. This spatial segmentation isolates adjacent transistors with impurity regions and trenches therebetween, reducing leak current while maintaining compact device footprint.
Solution Approach 2:
Impurity regions are selectively introduced into specific second regions between adjacent transistors, creating localized threshold voltage shifts only where needed. This local modification reduces leak current at critical interfaces without affecting the overall transistor performance or requiring global structural changes.
Solution Approach 3:
Impurity regions act as intermediary elements between adjacent transistors, mediating the electrical interaction by shifting threshold voltages to reduce leak current. The trenches further serve as physical intermediaries that isolate charge accumulation, preventing direct electrical coupling between neighboring transistors.
2Object-generated harmful factors
If impurity is introduced into the semiconductor substrate between transistors to reduce leak current, then leak current is reduced, but the junction withstand voltage may be compromised
Solution Approach 1:
Impurity regions are confined to specific second regions between transistors with controlled doping concentrations. This localized approach reduces leak current at transistor interfaces while maintaining adequate junction withstand voltage in other critical regions by avoiding excessive impurity accumulation.
Solution Approach 2:
The substrate is divided into functional regions where impurity introduction is selective rather than uniform. Second regions receive impurities for leak current suppression, while first regions (transistor areas) and third regions (trench areas) maintain different impurity profiles to preserve junction strength and withstand voltage.
3Ease of manufacture
If manufacturing process limitations are considered, then process feasibility is maintained, but the ability to reduce size and increase packaging density is constrained
Solution Approach 1:
The manufacturing process is segmented into standard steps (forming first regions, introducing impurities into second regions, creating trenches in third regions) that align with conventional semiconductor fabrication capabilities. This segmentation allows advanced device integration using existing process tools and techniques.
Solution Approach 2:
The invention utilizes controllable parameters of standard manufacturing processes, such as impurity concentration, implantation depth, and trench dimensions, to achieve leak current reduction and device miniaturization within the bounds of current manufacturing capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces leak current between transistors, allowing for smaller device sizes and higher packaging densities without compromising junction integrity.
Implementation Method 1
an impurity region that is adjacent to the first trench in the first substrate and includes carbon
Data Source
AI summary
A semiconductor device includes a first substrate that includes a plurality of regions including a first region, a second region, and a third region between the first and second regions, a first transistor in the first region, a second transistor in the second region, a first trench in the third region, a first conductive layer that continuously covers the first transistor, the first trench, and the second transistor, and an impurity region that is adjacent to the first trench in the first substrate and includes carbon.