Transition Active Pattern Layout for Wire-Fin Semiconductor Channels
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Solution Overview
Problem
Current semiconductor devices face challenges in preventing defects in the source and drain regions, which affect performance, reliability, and yield, particularly in regions with complex wire and fin-type patterns, and there is a need for improved design diversity and scaling techniques to manage short channel effects.
Innovation Solution
The semiconductor device incorporates a substrate with distinct regions featuring active patterns that include wire patterns and fin-type patterns, with transition patterns that alternate between different materials and have inclined surfaces, along with epitaxial patterns to enhance channel control and reduce damage during fabrication, allowing for improved design diversity and defect prevention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If wire patterns and fin-type patterns are mixed in a narrow region to improve design diversity, then design flexibility is enhanced, but manufacturing precision and defect prevention become more difficult
Solution Approach 1:
The active pattern is divided into multiple regions: a first region with wire patterns, a second region with fin-type patterns, and a third transition region. This segmentation allows each region to be optimized independently for its specific pattern type while managing the complexity of having both pattern types in close proximity.
Solution Approach 2:
A transition pattern is introduced as an intermediary structure between the wire pattern region and the fin-type pattern region. This transition pattern includes a sacrificial pattern and a semiconductor pattern alternately stacked, serving as a buffer zone that facilitates the gradual transition between different pattern geometries and reduces manufacturing challenges.
2Reliability
If multi-gate transistors with three-dimensional channels are used to suppress short channel effects, then device performance is improved, but device complexity increases
Solution Approach 1:
The invention transitions from planar two-dimensional channels to three-dimensional channels by forming wire patterns that extend vertically and gate structures that wrap around them. This dimensional change enables multi-gate control where gates can control the channel from multiple directions (top, bottom, and sides), effectively suppressing short channel effects through enhanced electrostatic control in three dimensions.
3Reliability
If transition patterns with alternating sacrificial and semiconductor patterns are used, then defect prevention in source and drain regions is improved, but manufacturing process complexity increases
Solution Approach 1:
The transition pattern is formed in advance before the final source and drain region fabrication. The sacrificial patterns are deposited and patterned first, creating a pre-structured template that guides subsequent semiconductor material deposition. This preliminary structuring ensures that when source and drain regions are formed later, they automatically align correctly with the wire and fin-type patterns, preventing defects.
Solution Approach 2:
The transition pattern utilizes alternating layers of sacrificial material and semiconductor material with different physical and chemical properties. The sacrificial material can be selectively removed or transformed, allowing dynamic parameter changes during fabrication. This enables the transition region to be formed and then modified as needed, facilitating defect-free integration of different pattern types.
Data Source
AI summary
A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.