Transition Layer Drying for High-Aspect-Ratio Etched Structures
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Solution Overview
Problem
The challenge in semiconductor production is the collapse or deformation of high-aspect-ratio nanostructures during wet cleaning due to capillary action, which affects yield and productivity.
Innovation Solution
A method is introduced to form a transition layer on the inner walls of etched structures to reduce capillary forces, followed by its removal after drying to restore the original structure, thereby preventing pattern collapse and deformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wet cleaning is performed to remove etching byproducts, then cleaning effectiveness is improved, but capillary action causes pattern collapse or deformation
Solution Approach 1:
A transition layer is introduced as an intermediary substance between the cleaning liquid and the etched structure. This transition layer reduces the capillary action of the cleaning liquid, preventing pattern collapse while maintaining cleaning effectiveness. The transition layer is subsequently removed to restore the original structure.
Solution Approach 2:
The transition layer is formed on the inner walls of etched structures before the wet cleaning process. This preliminary action prepares the structure to withstand the cleaning process by reducing capillary forces, thereby preventing pattern collapse during subsequent cleaning operations.
2Manufacturing precision
If surface finishing is applied to reduce capillary action, then pattern collapse is reduced, but super-hydrophobic effect prevents cleaning liquid penetration
Solution Approach 1:
The transition layer serves as a temporary intermediary that reduces capillary action without creating a permanent super-hydrophobic surface. It allows cleaning liquid to penetrate and clean the structure effectively while preventing pattern collapse, and is removed afterward to eliminate any residual hydrophobic effects.
Solution Approach 2:
The transition layer is designed as a temporary, disposable protective layer that is formed, used to prevent pattern collapse during cleaning, and then removed. It serves its protective function temporarily and is discarded after use, avoiding long-term negative effects like super-hydrophobicity.
3Manufacturing precision
If surface finishing agent is added after wet cleaning to prevent pattern collapse, then pattern stability is improved, but agent remains at STI structure bottom causing device abnormalities
Solution Approach 1:
Instead of adding a protective agent after cleaning, the transition layer is formed beforehand on the etched structures. This preliminary protective layer prevents pattern collapse during cleaning without risking residual contamination, as it is specifically designed to be removed after serving its protective function.
Solution Approach 2:
The transition layer converts the potential harm of capillary action into a beneficial protective effect during cleaning. By reducing capillary forces temporarily, it prevents pattern collapse, and its subsequent removal ensures no harmful residues remain in the structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces the probability of pattern collapse and deformation, improves semiconductor structure performance, and increases the yield and productivity of semiconductor devices.
Implementation Method 1
a capillary action may cause the collapse or deformation of the patterns
Implementation Method 2
drying the etched structures
Data Source
Figure 1~2B
Figure 2C~2F
Figure 3A~3C
AI summary
The present disclosure relates to the field of semiconductor fabrication technology, and in particular to a method for processing a semiconductor structure, including the following: providing a semiconductor structure, the semiconductor structure including a substrate and a plurality of etched structures arranged on the surface region of the substrate; forming a transition layer, the transition layer at least covering the inner walls of the etched structures, the transition layer being configured to reduce a capillary force exerted by a fluid on the etched structures and to serve as a sacrificial layer configured to repair a collapsed structure; drying the semiconductor structure; and removing the transition layer. According to the method provided by the present disclosure, the probability of the collapse or deformation of the etched structures during a cleaning process is reduced, the performance of the semiconductor structure is improved, and the productivity and the yield of the semiconductor devices are increased.