Transmissive Memory Pixel Circuit for High-Aperture Displays
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Solution Overview
Problem
Existing thin film transistors using amorphous silicon have low field-effect mobility, limiting the aperture ratio and power efficiency in display devices, and there is a need for further reduction in power consumption and size, especially for portable devices.
Innovation Solution
A display device with a pixel structure incorporating light-transmitting circuits and transistors, including a first circuit for signal control, a second circuit for signal holding, and a third circuit for voltage polarity control, all formed using light-transmitting materials, with a pixel electrode above these circuits, and utilizing light-transmitting switches such as transistors or diodes to enhance aperture ratio and reduce power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If amorphous silicon is used for the channel layer, then larger glass substrates can be used, but field-effect mobility is low
Solution Approach 1:
The patent changes the material parameter from amorphous silicon to oxide semiconductor (such as IGZO - indium gallium zinc oxide), which fundamentally alters the electrical properties. This material substitution enables achieving both large substrate compatibility and high field-effect mobility, resolving the contradiction between substrate size and carrier mobility.
2Productivity
If aperture ratio is increased, then light use efficiency increases, but power consumption and device size requirements increase
Solution Approach 1:
The patent utilizes the high mobility characteristics of oxide semiconductor materials to enable higher aperture ratios while maintaining low power consumption. The enhanced carrier mobility allows for more efficient charge transport, reducing the power required to maintain display quality even with larger aperture ratios that would traditionally increase power consumption.
3Productivity
If aperture ratio is increased, then light use efficiency increases, but device size increases
Solution Approach 1:
The patent employs oxide semiconductor materials with high mobility to achieve high aperture ratios without proportionally increasing device size. The superior electrical characteristics of IGZO enable more compact device structures while maintaining high light use efficiency, as the material's high mobility allows for reduced dimensional requirements in the transistor structure.
Data Source
AI summary
A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.