Transparent Conductive Bonding for Hybrid Optical-Electrical Conduits
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Solution Overview
Problem
Existing semiconductor and optoelectronic device bonding technologies rely on adhesives that form weak physical connections, which are prone to reversal and do not effectively manage thermal expansion differences between materials, limiting the density and reliability of connections.
Innovation Solution
Direct bonding techniques that form strong chemical bonds, such as covalent bonds, between non-conductive and conductive features of semiconductor elements without adhesives, utilizing activation and termination processes to enhance bonding strength and enable hybrid bonding of materials with different thermal expansion coefficients.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If adhesives are used for bonding semiconductor elements, then mechanical connection is achieved, but the connection strength is weak and prone to reversal
Solution Approach 1:
The patent removes adhesives from the bonding process entirely, extracting the problematic intermediate material that caused weak connections. Direct bonding is achieved by bringing semiconductor surfaces into contact without any adhesive layer, eliminating the source of connection failure and thermal expansion mismatch issues.
Solution Approach 2:
The patent introduces activation processes (plasma treatment, chemical treatment, or mechanical roughening) as intermediary steps that prepare surfaces for direct bonding. These activation treatments create reactive surface groups or increase surface energy, enabling strong covalent bonds to form directly between semiconductor surfaces without requiring adhesive materials.
2Stability of the object's composition
If adhesives are used for bonding, then mechanical connection is formed, but thermal expansion differences between materials are not effectively managed
Solution Approach 1:
The patent extracts the adhesive layer that acted as a thermal expansion mismatch buffer, forcing direct bonding between dissimilar materials. This eliminates the intermediate layer but creates direct thermal stress at the bond interface, which is then managed through surface activation and controlled bonding processes that create strong, stress-resistant bonds.
Solution Approach 2:
The patent changes the bonding parameters by using activation treatments and controlled pressure/temperature conditions during direct bonding. These parameter changes enable the formation of bonds that can withstand thermal expansion differences, creating thermally stable connections without requiring adhesive materials that would otherwise buffer the thermal mismatch.
3Strength
If direct bonding is used to achieve strong connections, then bonding strength is improved, but manufacturing complexity increases due to activation and termination processes
Solution Approach 1:
The patent merges the activation, bonding, and termination steps into an integrated direct bonding process. By combining these operations and optimizing process parameters, the overall process complexity is managed while achieving superior bond strength. The activation and termination processes are coordinated to work together efficiently rather than as separate, complex stages.
Solution Approach 2:
The patent employs self-aligned direct bonding where the semiconductor surfaces automatically align and bond when brought into contact after activation. The process utilizes the inherent properties of the semiconductor materials and surfaces to achieve alignment and bonding without requiring complex external alignment mechanisms or multi-step positioning procedures, thereby reducing process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves high-density, reliable connections with improved thermal stability and reduced risk of separation, enabling advanced semiconductor and optoelectronic device integration.
Implementation Method 1
a conduit extending through the at least one dielectric layer to transmit electrical signals and optical signals through the at least one dielectric layer
Implementation Method 2
an electrically conductive and optically transmissive first portion and an electrically insulative and optical transmissive second portion
Data Source
AI summary
A structure includes a substrate having a device with first and second sides generally opposite to one another, at least one dielectric layer at least partially overlying the second side of the device, and a conduit extending through the at least one dielectric layer to transmit electrical signals and optical signals through the at least one dielectric layer to and/or from the device. The conduit includes an electrically conductive and optically transmissive first portion and an electrically insulative and optical transmissive second portion. The first portion is in electrical communication with the second side of the device and is substantially overlying the second portion.