Transparent Conductive Coatings With High NIR Transmission and Low Resistivity

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Solution Overview

Problem

Current transparent conductive materials, such as indium tin oxide (ITO), exhibit poor transmission performance in the near infrared (NIR) wavelength range while maintaining high electrical conductivity, which is a challenge for applications like high-efficiency solar cells and IR photodetectors.

Innovation Solution

A method involving the deposition of a transparent conductive material layer, typically indium tin oxide, on a substrate followed by high-temperature annealing at least 450°C for 2 minutes, achieving a transmission of at least 70% at 1550 nm and a Haacke figure of merit of at least 40×10−4Ω−1, while maintaining low resistivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If high transmission in the near infrared range is achieved, then near infrared transmission is improved, but electrical conductivity deteriorates

Engineering Contradiction:
Improvenear infrared transmissionVSAvoidelectrical conductivity
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

The patent resolves this contradiction through parameter changes in the annealing process (temperature ≥450°C, time ≥2 minutes). This thermal parameter transformation simultaneously optimizes both optical transmission in the near infrared range and electrical conductivity, achieving a Haacke figure of merit of at least 40×10⁻⁴Ω⁻¹ by coordinating improvements in both properties rather than trading one for the other

Inventive Principle:
Principle #35Parameter changes

2Illumination intensity

If the thickness of the transparent conductive material layer is reduced to improve transmission, then optical transmission is improved, but electrical conductivity deteriorates

Engineering Contradiction:
Improveoptical transmissionVSAvoidelectrical conductivity
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

The patent applies parameter changes through high-temperature annealing (≥450°C for ≥2 minutes) that transforms the electrical properties of the thin film. This thermal treatment enables thin layers to maintain low resistivity while achieving high optical transmission, effectively decoupling the thickness-dependent trade-off between optical and electrical performance

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances both the NIR transmission and electrical conductivity of the transparent conductive materials, achieving a balance between sheet resistance and optical transmission, thereby improving their performance in optoelectronic devices.

Implementation Method 1

annealing the transparent conductive material at a temperature of at least about 450° C. for at least about 2 min

Methodology Applied
Scientific EffectAnnealing: Annealing

Implementation Method 2

the depositing comprises physical vapor deposition

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 3

the depositing comprises magnetron sputtering

Methodology Applied
Scientific EffectMagnetron sputtering: Sputtering

Data Source

PatentUS11891687B2Transparent conductor materials with enhanced near infrared properties and methods of forming thereof
Publication Date: 2024.02.06 CORNING INC
  • US11891687B2 patent drawing
  • US11891687B2 patent drawing
  • US11891687B2 patent drawing

AI summary

A method is provided for manufacturing an article comprising a transparent conductive material, wherein a transparent conductive material (e.g., indium tin oxide) is deposited onto a substrate (e.g., fused silica) by physical vapor deposition, then annealed at high temperature (i.e., at least 450° C.) in a nitrogen atmosphere. The resulting article comprises a transparent conductive material that reduces the trade-off between low resistivity (or sheet resistance) and high near infrared transmission. For example, the transparent conductive material thus obtained may possess a transmission of at least 80% at 1550 nm while having a resistivity of less than or equal to about 5×10−4 Ohm-cm and a Haacke figure of merit of at least about 40×10−4Ω−1. Also provided is a method for modulating the resistivity and/or the near infrared transmission of a transparent conductive material by annealing the transparent conductive material at a high temperature under nitrogen atmosphere.