Transparent Conductive Electrodes for Lateral PCSS
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Solution Overview
Problem
Lateral photoconductive semiconductor switches (PCSSs) with metallic electrodes exhibit high electrode resistance and low energy conversion efficiency when subjected to back side irradiation, limiting their performance in high-power applications.
Innovation Solution
Employing electrodes made of transparent conductive materials (TCMs) that allow electromagnetic radiation to pass through, directly exposing the shadow zones underneath the electrodes, thereby increasing photon energy absorption and reducing electrode resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metallic electrodes are used in lateral PCSS, then electrode resistance is reduced, but energy conversion efficiency deteriorates when subjected to back side irradiation
Solution Approach 1:
The patent changes the optical parameter of the electrode material from opaque (metallic) to transparent (TCM), allowing electromagnetic radiation to pass through the electrode and reach the shadow zone of the substrate, thereby improving energy conversion efficiency while maintaining low electrode resistance
Solution Approach 2:
The patent employs transparent conductive materials (TCMs) that combine the properties of electrical conductivity (like metals) with optical transparency (like dielectrics), creating a composite material that resolves the contradiction between low resistance and high energy conversion efficiency
2Reliability
If back side irradiation is used in lateral PCSS, then electrode resistance is reduced, but energy conversion efficiency deteriorates
Solution Approach 1:
The patent inverts the conventional understanding by making the electrode transparent instead of opaque, allowing radiation to pass through rather than being blocked, thereby converting the shadow zone from a harmful region to a useful region for photon absorption
Solution Approach 2:
The transparent conductive material acts as an intermediary that allows electromagnetic radiation to pass through the electrode structure, mediating between the radiation source and the substrate to enable efficient energy transfer while maintaining electrical conductivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances current flow and maintains high energy conversion efficiency by directly irradiating the substrate underneath the TCM electrodes, improving the performance of lateral PCSSs in high-power applications.
Implementation Method 1
A PCSS may be an electric switch that is based upon the photoconductivity of a material and controlled by light via photon-induced conductivity. Photoconductivity may be considered an optical and electrical phenomenon in which a material becomes more electrically conductive due to an absorption of electromagnetic radiation when irradiated.
Implementation Method 2
Where photon energy is sufficient enough to raise electrons above the band gap energy, free electrons are generated and electrical current flows. As number of free electrons and electron holes in the material increases, conductivity increases.
Data Source
AI summary
A present novel and non-trivial semiconductor device, switch device and method performed by the switch device is disclosed. A semiconductor device for conducting current may be comprised of an SI substrate and a plurality of electrodes deposited upon the substrate, where at least one electrode may be comprised of a transparent conductive material (“TCM”). A switching device may be comprised of a plurality of electromagnetic radiation sources and a plurality of the semiconductor devices. The method performed by the switching device may be comprised of receiving a plurality of cycles. During a first cycle, a first semiconductor device may be irradiated, and in response, current may flow through the first semiconductor device and provided to a user circuit. During the second cycle, a second semiconductor device may be irradiated, and in response, current from a user circuit may be received and flow through the first semiconductor device.


